TITLE

Effect of magnetic field on random telegraph noise in the source current of p-channel metal–oxide–semiconductor field-effect transistors

AUTHOR(S)
Baron, Filipp A.; Zhang, Yaohui; Bao, Mingqiang; Li, Ruigang; Li, Jinmin; Wang, Kang L.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p710
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Drain leakage current in accumulated metal–oxide–semiconductor field-effect transistors (MOSFETs) is pumped out completely by the body, while the source current should be zero due to the barrier of the p/n junction between the source and the accumulated channel. In this letter, we observe a fraction of drain current flowing into the source terminal in accumulated p-channel MOSFETs at low temperature. Under a certain gate bias region, the random telegraph noise (RTN) with an amplitude of 30% is observed in the source current of the devices. The source-current RTN disappears completely when the measured temperature exceeds 4.2 K. The source-current RTN is strongly affected by applied magnetic field, which causes the large decrease of the average switching time of the source RTN. We believe that the random charging and discharging of single defects at the SiO&sub2; /Si interface of the gate–source overlap region may strongly disturb the band-to-band tunneling process, and thereby result in the source-current RTN.
ACCESSION #
10331080

 

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