Spin-polarized injection into YBaCu[sub 3]O[sub 7] grain boundary junctions

Ireland, J.; Chakalov, R.; Colclough, M. S.; Muirhead, C. M.
July 2003
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p725
Academic Journal
YBa&sub2;Cu&sub3;O&sub7;/SrTiO&sub3;/La[sub0.67]Ca[sub0.33]MnO&sub3; trilayer thin films grown on bicrystal substrates were patterned into a structure that allows the injection of spin-polarized current into the region of a grain boundary junction (GBJ). The transfer length L[subT] was determined to ensure that injection was over the entire device width, in contrast to previously reported experiments. Currents up to some 100 times the junction critical current I[sub0;] and area density 10[sup8;]A m&sup-2], have been injected into the GBJ region by using an offset current method. The I[sub0;](Î’) characteristics of the GBJ under injection suggest that the suppression of I[sub0;] can be explained by a combination of heating and self-field effects, without any need to invoke the spin-polarized nature of the injected current. We find no evidence of direct injection into the junction.


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