TITLE

Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors

AUTHOR(S)
Lin, Shih-Yen; Tsai, Yao-Jen; Lee, Si-Chen
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p752
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A ten-stacked self-assembled InAs/GaAs quantum dot (QD) infrared photodetector is investigated. A wide detection window of 2—10 mµm is observed with a peak responsivity of 187 mA/W at 7 µm under an applied voltage of 1.1 V. The observed negative differential conductance (NDC) of the photocurrent at low temperature is attributed to the formation of high-field domains and the resultant intervalley scattering in the GaAs barrier layer. The disappearance of the NDC and the increase of single-QD photoluminescence intensity with increasing temperature below 100 K are attributed to the thermally assisted electron redistribution with increasing temperature.
ACCESSION #
10331065

 

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