Characteristics of ultrathin HfO[sub 2] gate dielectrics on strained-Si[sub 0.74]Ge[sub 0.26] layers

Lee, Je-Hun; Maikap, S.; Kim, Doh-Y.; Mahapatra, R.; Ray, S. K.; No, Y. S.; Choi, Won-Kook
July 2003
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p779
Academic Journal
The structural and electrical characteristics of HfO[sub2] gate dielectrics along with the interfacial layers formed on strained-Si{sub0.74]Ge[sub0.26] (films have been investigated. The polycrystalline HfO[sub2] film with a physical thickness of ∼4.0 nm and an amorphous Hf–silicate interfacial layer with a physical thickness of ∼4.5 nm have been observed by high-resolution transmission electron microscopy and time-of-flight secondary ion mass spectroscopy. The electrical properties have been studied using metal–oxide–semiconductor (MOS) structures. A dielectric constant of 26 for HfO[sub2] film and 8.0 for Hf–silicate interfacial layer have been calculated from the accumulation capacitances of the capacitors. These dielectrics show an equivalent oxide thickness as low as 0.6 nm for HfO⊂2 and 2.2 nm for the Hf–silicate layers. The fabricated SiGe MOS capacitors show a low leakage current density of ∼6.5×10[sup;-7]A/cm⊃-2 at a gate voltage of -1.0 V, breakdown field of 6.5 MV/cm, and moderately low interface state density of 5.5310[sup;11]cm⊃-2)eV[sub;1].


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