TITLE

Scaling limits of hafnium–silicate films for gate-dielectric applications

AUTHOR(S)
Takeuchi, Hideki; King, Tsu-Jae
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p788
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The scaling limits of hafnium‐silicate (Hf‐silicate) films for use as the gate dielectric material in complementary metal‐oxide‐semiconductor field-effect transistors are investigated. Scalability is gauged by a figure of merit taken from the analytical model for direct tunneling leakage current. Based on the compositional dependence of this figure of merit, pure HfO[sub2] (is more scalable than)Hf‐silicates. However, the formation of intermediate oxide layers at the Si interface can limit the (scalability of HfO[sub2] to ∼1.0 nm equivalent SiO[sub2] thickness(EOT). The use of Si[sub3]N[sub]4 as a diffusion barrier can prevent the formation of these interfacial layers and thereby yield lower EOT. Alternatively, 20% Hf‐silicate may be more scalable than pure HfO[sub2] with interfacial oxide layers.
ACCESSION #
10331053

 

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