Scaling limits of hafnium–silicate films for gate-dielectric applications

Takeuchi, Hideki; King, Tsu-Jae
July 2003
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p788
Academic Journal
The scaling limits of hafnium‐silicate (Hf‐silicate) films for use as the gate dielectric material in complementary metal‐oxide‐semiconductor field-effect transistors are investigated. Scalability is gauged by a figure of merit taken from the analytical model for direct tunneling leakage current. Based on the compositional dependence of this figure of merit, pure HfO[sub2] (is more scalable than)Hf‐silicates. However, the formation of intermediate oxide layers at the Si interface can limit the (scalability of HfO[sub2] to ∼1.0 nm equivalent SiO[sub2] thickness(EOT). The use of Si[sub3]N[sub]4 as a diffusion barrier can prevent the formation of these interfacial layers and thereby yield lower EOT. Alternatively, 20% Hf‐silicate may be more scalable than pure HfO[sub2] with interfacial oxide layers.


Related Articles

  • Charge trapping in nitrided HfSiO gate dielectric layers. Vellianitis, G.; Rittersma, Z. M.; Pétry, J. // Applied Physics Letters;8/28/2006, Vol. 89 Issue 9, p092902 

    The effects of HfSiO nitridation on charge trapping and long-term dielectric reliability are investigated. A comparison between decoupled plasma nitridation, annealing in NH3, and no nitridation is made. It was found that thinner HfSiO layers show less trapped charge. Decoupled plasma...

  • Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown. Choi, Youn Sung; Park, Hyunwoo; Nishida, Toshikazu; Thompson, Scott E. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    The time dependent dielectric breakdown (TDDB) of 7–8 nm thick nitrided hafnium silicate (HfSiON) dielectric silicon (Si) metal-oxide-semiconductor capacitors are measured under uniaxial mechanical stress using four point wafer bending along the [110] direction. Both applied tensile and...

  • Deposition and characterization of HfO2 high k dielectric films. Wai Lo; Kamath, Arvind; Kher, Shreyas; Metzner, Craig; Wen, Jianguo; Zhihao Chen // Journal of Materials Research;Jun2004, Vol. 19 Issue 6, p1775 

    As the scaling of complementary metal-oxide-semiconductor (CMOS) transistors proceeds, the thickness of the SiO2 gate dielectrics shrinks rapidly and results in higher gate leakage currents. High k dielectric materials are acknowledged to be the possible solutions to this challenge, as their...

  • Turnaround of hysterisis for capacitance–voltage characteristics of hafnium oxynitride dielectrics. Wang, J.C.; Shie, D.C.; Lei, T.F.; Lee, C.L. // Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1531 

    The capacitance–voltage (C–V) characteristics of hafnium oxynitride gate dielectrics for silicon metal-oxide-semiconductor (MOS) capacitors with different sweep voltage were investigated. It was found that, for the p-type substrate MOS capacitor, the C–V hysterisis has a...

  • Threshold voltage instability of p-channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics. Zhao, C. Z.; Zahid, M. B.; Zhang, J. F.; Groeseneken, G.; Degraeve, R.; De Gendt, S. // Applied Physics Letters;4/2/2007, Vol. 90 Issue 14, p143502 

    Threshold voltage Vth instability is one major issue for future metal-oxide-semiconductor field effect transistors (MOSFETs) with hafnium (Hf) based gate dielectrics. Previous attention was focused on n-channel MOSFETs (nMOSFETs) and the implicit assumption is that it is not important for...

  • Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability. Rahim, N.; Misra, D. // Applied Physics Letters;1/14/2008, Vol. 92 Issue 2, p023511 

    This work investigates the role of hydrogen and nitrogen in a Ge/HfO2/Al gate stack by comparing the negative bias temperature instability (NBTI) characteristics with and without the surface nitridation of Ge surface prior to HfO2 deposition. Flatband voltage shift, change in interface state...

  • Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors. Yoontae Hwang; Chobpattana, Varistha; Zhang, Jack Y.; LeBeau, James M.; Engel-Herbert, Roman; Stemmer, Susanne // Applied Physics Letters;4/4/2011, Vol. 98 Issue 14, p142901 

    Hafnium oxide gate dielectrics doped with a one to two percent of aluminum are grown on In0.53Ga0.47As channels by codeposition of trimethylaluminum (TMA) and hafnium tertbutoxide (HTB). It is shown that the addition of TMA during growth allows for smooth, amorphous films that can be scaled to...

  • Contamination of silicon dioxide films by aqueous zirconium and hafnium species. Lowalekar, V.; Raghavan, S.; Pandit, V.; Parks, H. G.; Jeon, J. // Journal of Applied Physics;1/15/2006, Vol. 99 Issue 2, p024503 

    Zirconium and hafnium oxides and silicates have emerged as potential replacements for SiO2 as gate dielectric material. Patterning of these materials by wet etching in fabrication areas originally designed for SiO2 gates may give rise to contamination of SiO2 by aqueous zirconium and hafnium...

  • Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1-xO2/(100)Si interfaces. Chen, P. T.; Triplett, B. B.; Chambers, J. J.; Colombo, L.; McIntyre, P. C.; Nishi, Y. // Journal of Applied Physics;Jul2008, Vol. 104 Issue 1, p014106 

    This study reports on the first experimental observations of electrically biased paramagnetic defects at 800 °C N2 annealed HfxSi1-xO2 (x=0.4, and 0.6)/(100)Si and HfO2/(100)Si interfaces in metal oxide silicon structures. These defects are examined by electrical-field controlled electron...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics