Room-temperature electroluminescence of ion-beam-synthesized β-FeSi[sub 2] precipitates in silicon

Martinelli, Lucio; Grilli, E.; Guzzi, M.; Grimaldi, M. G.
July 2003
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p794
Academic Journal
A simple silicon-based electroluminescent device has been realized, embedding Β-eSi[sub2] precipitates in the depletion region of a Si p—n junction by ion-beam synthesis, a process fully compatible with microelectronics technologies. Light emission peaked at about 1.6 µm has been observed up to room temperature. The luminescence signal is shown to be due to interband recombination in the crystalline nanoprecipitates.


Related Articles

  • The Effect of Irradiation with Fast Argon Ions on the Characteristics of Planar Silicon Heterostructures. Karatetskiı, S. S.; Korovin, O. P.; Sokolov, V. I. // Technical Physics Letters;Jan2002, Vol. 28 Issue 1, p13 

    Irradiation of a silicon-based planar heterostructure with 40-MeV argon ions leads to a decrease in the MOS structure capacitance and in the p-n junction photosensitivity range. The effects are explained by special features of the damage produced by fast ions in the crystal target.

  • Improvement of the probe profiling method for InP/GalnAsP structures using Kr[sup +] ion.... Walachova, J. // Applied Physics Letters;6/8/1992, Vol. 60 Issue 23, p2920 

    Demonstrates the improvement of the probe profiling method for indium phosphide/gallium indium arsenic phosphide structures using krypton ion bombardment. Basis of the probe profiling method; Discussion on the limiting resolution of the method; Presentation of resulting active defects produced...

  • Effect of Ar ion beam channeling on AlGaN/GaN heterostructures during the ion beam etching process. Breitscha¨del, O.; Hsieh, J. T.; Kuhn, B.; Scholz, F.; Schweizer, H. // Applied Physics Letters;4/3/2000, Vol. 76 Issue 14 

    The effect of Ar[sup +] ion beam etching of AlGaN/GaN heterostructures at a bias voltage of 250 V was investigated with respect to different ion incident angles. The samples were measured before and after etching with respect to mobility, sheet electron concentration, and sheet resistance. We...

  • Enhanced emission and light control with tapered plasmonic nanoantennas. Maksymov, Ivan S.; Davoyan, Arthur R.; Kivshar, Yuri S. // Applied Physics Letters;8/22/2011, Vol. 99 Issue 8, p083304 

    We introduce a design of Yagi-Uda plasmonic nanoantennas for enhancing the directive gain and achieving control over the angular emission of light. We demonstrate that tapering of nanoantenna elements allows to decrease the inter-element spacing tenfold also enhancing the emission directivity....

  • Group-IV nanocluster formation by ion-beam synthesis. Skorupa, W.; Rebohle, L.; Gebel, T. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 7, p1049 

    A short review of our investigations devoted to the use of ion-beam-synthesized nanoclusters for silicon-based light emission and nonvolatile memory effects is presented. Blue-violet light emission is demonstrated based on Ge-implanted silicon dioxide layers thermally grown on silicon...

  • Multichannel filters with shape designing in two-dimensional photonic crystal slabs. Liu, Ya-Zhao; Feng, Shuai; Tian, Jie; Ren, Cheng; Tao, Haihua; Li, Zhi-Yuan; Cheng, Bing-Ying; Zhang, Dao-Zhong; Luo, Qiang // Journal of Applied Physics;8/15/2007, Vol. 102 Issue 4, p043102 

    We investigated the influence of the irregular shape of air holes on the optical characteristics of channel-drop filters built in a two-dimensional photonic crystal slab. Three differently shaped structures are tested by experiments and simulations to demonstrate the shape-tuning capability of...

  • High-performance InGaAsP/InP buried-heterostructure lasers and arrays defined by ion-beam-assisted etching. Yap, D.; Liau, Z. L.; Tsang, D. Z.; Walpole, J. N. // Applied Physics Letters;5/2/1988, Vol. 52 Issue 18, p1464 

    Ion-beam-assisted etching has been used to fabricate mass-transported InGaAsP/InP buried- heterostructure lasers. These lasers have a novel, deeply etched rectangular mesa that results in reduced current leakage. Both single-stripe lasers and Y-junction-coupled multiple-stripe laser arrays have...

  • Effects of Low-Energy Ion Beam Action on Ge/Si Heteroepitaxy from Molecular Beam. Dvurechenskiı, A. V.; Zinovyev, V. A.; Kudryavtsev, V. A.; Smagina, Zh. V. // JETP Letters;8/10/2000, Vol. 72 Issue 3, p131 

    The evolution of the surface morphology of a pseudomorphic Ge film on Si upon irradiation with its own low-energy (230 eV) ions during heteroepitaxy from molecular beam has been studied experimentally by reflection high-energy electron diffraction. It has been found that irradiation with a...

  • Variations in the Properties of an Implantation-Synthesized Si[sub x]N[sub y]�Si Heterosystem as a Result of Thermal and Ion-Beam Treatments. Karzanov, V. V.; Markov, K. A.; Sdobnyakov, V. V.; Demidov, E. S. // Semiconductors;Sep2002, Vol. 36 Issue 9, p985 

    Transmission electron microscopy, infrared spectroscopy, and the measurements of current-voltage characteristics and capacitance were used to study the influence of heat treatment and the long-range effect of irradiation of the rear side of an Si wafer with Ar, Ne, and Si ions on the state of an...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics