TITLE

Photoreflectance evidence of the N-induced increase of the exciton binding energy in an In[sub x]Ga[sub 1-x]As[sub 1-y]N[sub y] alloy

AUTHOR(S)
Geddo, M.; Guizzetti, G.; Capizzi, M.; Polimeni, A.; Gollub, D.; Forchel, A.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p470
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The binding energy of the heavy-hole ground-state exciton in In[SUB0.25]Ga[SUB0.75]As[SUB1-y]N[SUBy]/GaAs single quantum wells (y = 0, 0.011) was experimentally derived by photoreflectance measurements. We measured a binding energy of 6.6 and 8.5 meV for the N-free and the N-containing sample, respectively. The observed increase of the exciton binding energy can be accounted for by an increase of the exciton reduced mass of about 30% upon N introduction into the In[SUBx]Ga[SUB1-x]As lattice, consistently with recent experimental results and in agreement with earlier theoretical predictions.
ACCESSION #
10281609

 

Related Articles

  • Excitonic and Raman properties of ZnSe/Zn1-xCdxSe strained-layer quantum wells. Lozykowski, H. J.; Shastri, V. K. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p3235 

    Studies the optical properties of strained-layer ZnSe/Zn[sub0.86]Cd[sub0.14]Se single quantum wells. Investigation of photoluminescence under direct and indirect excitation; Temperature dependence of photoluminescence and resonant Raman scattering; Comparison of the experimental exciton energies...

  • Room-temperature exciton absorption engineering in II-VI quantum wells. Pelekanos, N.T.; Haas, H. // Applied Physics Letters;12/28/1992, Vol. 61 Issue 26, p3154 

    Examines the excitonic absorption of cadmium telluride/(cadmium,zinc)tellurium multiple quantum well (QW) samples. Reduction in exciton-phonon coupling by exciton confinement; Effect of excitonic absorption on exciton-LO phonon coupling; Decrease of exciton linewidth broadening with an increase...

  • Energy Structure of A[sup +] Centers in Quantum Wells. Averkiev, N. S.; Zhukov, A. E.; Ivanov, Yu. L.; Petrov, P. V.; Romanov, K. S.; Tonkikh, A. A.; Ustinov, V. M.; Tsyrlin, G. E. // Semiconductors;Feb2004, Vol. 38 Issue 2, p217 

    Hole states localized at acceptors in quantum wells are considered within the zero-range potential model. The dispersion equation for holes is analytically derived taking into account the complex structure of the valence band of symmetry Γ[sub 8]. The results obtained are compared with the...

  • Time Resolved Photoluminescence Study of the Wide (Cd,Mn)Te/(Cd,Mg)Te Quantum Well. KUTROWSKA, J.; BUGAJNY, P.; BARANOWSKI, M.; BRYJA, L.; SYPEREK, M.; WÓJS, A.; MISIEWICZ, J.; WIATER, M.; KARCZEWSKI, G.; WOJTOWICZ, T. // Acta Physica Polonica, A.;Nov2013, Vol. 124 Issue 5, p895 

    The static and dynamic properties of excitons and trions in a 80 nm wide Cd1-xMnxTe/Cd0:7Mg0:3Te quantum well with extremely small Mn content (x = 0:00027) have been studied by means of time-integrated and time-resolved photoluminescence experiment at low and elevated temperatures. The trion...

  • Effect of Exciton-Longitudinal Optical Phonon Interaction on Exciton Binding Energies in ZnS/MgxBeyZn1-x-yS Quantum Wells. Onodera, C.; Yoshida, M. // Acta Physica Polonica, A.;Oct2010, Vol. 118 Issue 4, p643 

    We study the effects of exciton-longitudinal optical phonon interaction on the exciton binding energies in ZnS/MgxBeyZn1-x-yS single quantum wells. The heavy- and light-hole exciton binding energies increase to the exciton-logitudinal optical phonon interaction. The increase in the maximum...

  • Two Dimensional Coulomb Potential of Confined Excitons in Quantum Well Structures. Solaimani, M.; Izadifard, M.; Arabshahi, H.; Sarkardei, M. R. // Journal of Nano- & Electronic Physics;2012, Vol. 4 Issue 4, p04012-1 

    In this study, we have investigated an exciton confined in a single quantum well. For the first time, we have compared the different methods of approximating the effective two dimensional Coulomb potentials which had been previously reported in the literatures. The effect of different previously...

  • Excitonic properties of type-I and type-II Si/Si1-xGex quantum wells. Chaves, Andrey; Costa e Silva, J.; Freire, J. A. K.; Farias, G. A. // Journal of Applied Physics;6/1/2007, Vol. 101 Issue 11, p113703 

    The exciton properties of Si/Si1-xGex quantum wells (QWs) are investigated within a variational approach, taking into account interface effects for two possibilities of the band alignment, type I and type II. For the latter, two-dimensional (2D) and three-dimensional (3D) variational wave...

  • Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers. He, Chenguang; Qin, Zhixin; Xu, Fujun; Hou, Mengjun; Zhang, Shan; Zhang, Lisheng; Wang, Xinqiang; Ge, Weikun; Shen, Bo // Scientific Reports;8/14/2015, p13046 

    Free exciton (FX) and bound exciton (BX) in Al0.5Ga0.5N/Al0.35Ga0.65N multiple quantum wells (MQWs) with different Si-doping levels in the well layers are investigated by photoluminescence (PL) spectra. Low temperature (10 K) PL spectra identify a large binding energy of 87.4 meV for the BX in...

  • Many particle and bandstructure effects in intersubband quantum well optics. Pereira Jr., M. F. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2003, Vol. 6 Issue 3, p316 

    In this paper, intersubband optical absorption spectra are computed from an optical susceptibility derived from the many-body formalism. The theory is valid for both non-equilibrium and equilibrium conditions. Numerical results are presented for III-V quantum wells at equilibrium, and electron...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics