Photoreflectance evidence of the N-induced increase of the exciton binding energy in an In[sub x]Ga[sub 1-x]As[sub 1-y]N[sub y] alloy

Geddo, M.; Guizzetti, G.; Capizzi, M.; Polimeni, A.; Gollub, D.; Forchel, A.
July 2003
Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p470
Academic Journal
The binding energy of the heavy-hole ground-state exciton in In[SUB0.25]Ga[SUB0.75]As[SUB1-y]N[SUBy]/GaAs single quantum wells (y = 0, 0.011) was experimentally derived by photoreflectance measurements. We measured a binding energy of 6.6 and 8.5 meV for the N-free and the N-containing sample, respectively. The observed increase of the exciton binding energy can be accounted for by an increase of the exciton reduced mass of about 30% upon N introduction into the In[SUBx]Ga[SUB1-x]As lattice, consistently with recent experimental results and in agreement with earlier theoretical predictions.


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