Growth of InP quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition

Zhang, X. B.; Heller, R. D.; Noh, M. S.; Dupuis, R. D.; Walter, G.; Holonyak, N.
July 2003
Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p476
Academic Journal
We report the growth of InP self-assembled quantum dots (QDs) on In[SUB0.5]Al[SUB0.5]P and In[SUB0.5]Al[SUB0.6]Ga[SUB0.4])[SUB0.5]P matrices, lattice matched on 0°, 2°, 6°, and 25° off-axis(100) GaAs substrates by metalorganic chemical vapor deposition. The influence of the substrate misorientation on the morphology and cathodoluminescence (CL) properties of the InP QDs was investigated. We find that the density of QDs grown on both In[SUB0.5]Al[SUB0.5]P and In[SUB0.5]Al[SUB0.6]Ga[SUB0.4])[SUB0.5]P matrices increases with the misorientation angle up to 6° off (100). At the same time, the dispersion of the QD size is getting larger for the growth on an In[SUB0.5]Al[SUB0.5]P matrix, but not for the growth on an In[SUB0.5]Al[SUB0.6]Ga[SUB0.4])[SUB0.5]P matrix. The InP QDs grown on In[SUB0.5]Al[SUB0.6]Ga[SUB0.4])[SUB0.5]P on 25° off-axis substrates are two-dimensionally well ordered. Moreover, the ordering improves and the density of QDs increases with an increase in the deposition of InP. The room-temperature CL intensity of InP QDs grown on a 25° off In[SUB0.5]Al[SUB0.6]Ga[SUB0.4])[SUB0.5]P is much stronger than that for InP QDs grown on a 25°-off In[SUB0.5]Al[SUB0.5]P matrix.


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