TITLE

Boron pile-up at the interface between plasma enhanced chemical vapor deposited TiSi[sub 2] film and BF[sub 2]-doped Si

AUTHOR(S)
Lee, Yoon-Jik; Sohn, Hyun Chul; Chung, Sung-Woong
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p494
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the redistribution of boron in BF[SUB2]-doped Si substrate during plasma enhanced chemical vapor deposition (PECVD) of TiSi[SUB2] with secondary ion mass spectrometry. Boron concentration was observed to be increased at the TiSi[SUB2]/Si interface after deposition of PECVD TiSi[SUB2]. Contact resistance with PECVD TiSi[SUB2] was measured to be constant in the range of -30- 125 °C, implying that the accumulated boron was electrically active and charge transport was field emission in nature.
ACCESSION #
10281601

 

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