NiAi[sub 1.74]Al[sub 0.26] and NiSi[sub 1.83]Ga[sub 0.17]: Two materials with perfect lattice match to Si

Richter, Klaus W.; Hiebl, Kurt
July 2003
Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p497
Academic Journal
We report on the preparation and characterization of two materials based on cubic NiSi[SUB2] (CaF[SUB2]-type, cF12, Fm&3sline;m) that show no lattice mismatch to Si and are thus promising materials for perfect epitaxial films grown on silicon. The perfectly lattice-matched materials are special compositions within the extended solid solution phases NiSi[SUB2-x]Al[SUBx] and NiSi[SUB2-x]Ga[SUBx] with x = 0.26 for Al and x = 0.17 for Ga, respectively. The variations of bulk lattice parameters with the composition were studied by means of x-ray diffraction and the melting behavior of the solid solution phases was investigated by differential thermal analysis. Both phases are thermally stable up to temperatures around 1000 °C. Phase diagram investigations show that the respective phases are in thermodynamic equilibrium with pure silicon. The electrical conductivity of NiSi[SUB2 - xAl[SUBx] and NiSi[SUB2 - xGa[SUBx] was studied on selected bulk samples between 4.2 and 300 K. Both materials show metallic behavior with specific room-temperature resistivities between 23 and 40 mV cm. The difference is mainly due to intrinsic defects in these compounds.


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