TITLE

NiAi[sub 1.74]Al[sub 0.26] and NiSi[sub 1.83]Ga[sub 0.17]: Two materials with perfect lattice match to Si

AUTHOR(S)
Richter, Klaus W.; Hiebl, Kurt
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p497
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the preparation and characterization of two materials based on cubic NiSi[SUB2] (CaF[SUB2]-type, cF12, Fm&3sline;m) that show no lattice mismatch to Si and are thus promising materials for perfect epitaxial films grown on silicon. The perfectly lattice-matched materials are special compositions within the extended solid solution phases NiSi[SUB2-x]Al[SUBx] and NiSi[SUB2-x]Ga[SUBx] with x = 0.26 for Al and x = 0.17 for Ga, respectively. The variations of bulk lattice parameters with the composition were studied by means of x-ray diffraction and the melting behavior of the solid solution phases was investigated by differential thermal analysis. Both phases are thermally stable up to temperatures around 1000 °C. Phase diagram investigations show that the respective phases are in thermodynamic equilibrium with pure silicon. The electrical conductivity of NiSi[SUB2 - xAl[SUBx] and NiSi[SUB2 - xGa[SUBx] was studied on selected bulk samples between 4.2 and 300 K. Both materials show metallic behavior with specific room-temperature resistivities between 23 and 40 mV cm. The difference is mainly due to intrinsic defects in these compounds.
ACCESSION #
10281600

 

Related Articles

  • Thermal conductivity of RNi[sub 2]B[sub 2]C (R=Y and rare earth) systems under applied magnetic fields. Cao, S. X.; Mori, K.; Qin, X. L.; Nishimura, K.; Zhang, J. C. // AIP Conference Proceedings;2002, Vol. 614 Issue 1, p1067 

    The thermal conductivity of the quaternary nickel borocarbide compounds RNi[sub 2]B[sub 2]C (R=Y and Rare earth) has been systematically studied. Temperature and applied magnetic field dependences of the thermal conductivity have been measured in the temperature range from 4.2 K to 25 K, under...

  • Thermal conductivity of elemental crystalline silicon clathrate Si[sub 136]. Nolas, G. S.; Beekman, M.; Gryko, J.; Lamberton, G. A.; Tritt, T. M.; McMillan, P. F. // Applied Physics Letters;2/10/2003, Vol. 82 Issue 6, p910 

    The thermal conductivity and heat capacity of a guest-free polycrystalline silicon clathrate with the type-II hydrate crystal structure is reported. The magnitude of the thermal conductivity at room temperature is only slightly larger than that of vitreous silica, and is thirty times lower than...

  • Transport mechanism in semiconducting glassy silicon vanadates. Ghosh, A. // Journal of Applied Physics;9/15/1993, Vol. 74 Issue 6, p3961 

    Presents a study which examined the electrical transport properties of glassy silicon vanadates. Discussion of the theories used in the study; Information on the temperature dependence of the conductivity; Analysis of the experimental results with reference to the existing theoretical models of...

  • Effect of growth conditions on the structural properties of ion beam sputter deposited SiGe epilayers. Lyakas, M.; Arazi, T.; Eizenberg, M.; Demuth, V.; Strunk, H. P.; Mosleh, N.; Meyer, F.; Schwebel, C. // Journal of Applied Physics;10/15/1995, Vol. 78 Issue 8, p4975 

    Deals with a study which examined the structural properties of silicon germanium layers epitaxially grown on silicon by ion beam sputter deposition. Experimental procedures; Effect of growth temperature on the epilayers properties; Temperature dependence of surface topology.

  • Influence of temperature and electronic disorder on the Raman spectra of nickel cobalt oxides. Windisch, Charles F.; Exarhos, Gregory J.; Sharma, Shiv K. // Journal of Applied Physics;11/1/2002, Vol. 92 Issue 9, p5572 

    Raman spectra of nickel cobalt oxide films with spinel crystal structure showed unexpected variations with film thickness. Combined with the results of studies as a function of incident laser power and temperature, from 25 to 800 K, the results strongly point to a small polaron hopping model for...

  • Novel Gold Nanoparticles/Conjugated Molecules Network Structures Fabricated By Self-assembling Process. Akasaka, Tetsuo; Umeno, Akinori; Hong, Su Heon; Hirakawa, Kazuhiko; Araki, Koji // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p361 

    Self-assembled network of gold nanoparticles connected by molecules on SiO2/Si surfaces over macroscopic distances was prepared by alternately dipping substrates into gold nanoparticle- and molecule-solutions. A significant conductivity was observed even after 1 cycle of deposition, suggesting...

  • Grain structure effects on the lattice thermal conductivity of Ti-based half-Heusler alloys. Bhattacharya, S.; Tritt, Terry M.; Xia, Y.; Ponnambalam, V.; Poon, S. J.; Thadhani, N. // Applied Physics Letters;7/1/2002, Vol. 81 Issue 1, p43 

    Half-Heusler alloys with the general formula TiNiSn[sub 1-x]Sb[sub x] are currently being investigated for their potential as thermoelectric (TE) materials. A systematic investigation of the effect of Sb doping on the Sn site and Zr doping on the Ti site on the electrical and thermal transport...

  • Magnetization switching and tunneling magnetoresistance effects of synthetic antiferromagnet free layers consisting of amorphous NiFeSiB. Byong Sun Chun; Ilsang Yoo; Young Keun Kim; Jae Youn Hwang; Jang Roh Rhee; Taewan Kim; Wanjun Park // Applied Physics Letters;8/22/2005, Vol. 87 Issue 8, p082508 

    A synthetic antiferromagnet (SAF) structure comprising of ferromagnetic amorphous Ni16Fe62Si8B14 layers has been devised and employed as a free layer of magnetic tunnel junctions (MTJs) to enhance cell switching performance. We observed -0.03 erg/cm2 of exchange coupling energy (Jex) by...

  • The effect of firing temperature, preparation technique and composition on the electrical properties of the nickel cobalt oxide series NixCo1 - xOy. Lapham, D. P.; Tseung, A. C. C. // Journal of Materials Science;Jan2004, Vol. 39 Issue 1, p251 

    The spinel NiCo2O4 and the materials within the Ni-Co oxide series have well established applications in electrochemistry. However, the importance of the electrical conductivity of these materials and the consequences of the choice of preparation technique and firing regime are often overlooked....

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics