TITLE

Passivation and interface state density of SiO[sub 2]/HfO[sub 2]-based/polycrystalline-Si gate stacks

AUTHOR(S)
Carter, R. J.; Cartier, E.; Kerber, A.; Pantisano, L.; Schram, T.; De Gendt, S.; Heyns, M.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p533
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate that a forming gas annealing temperature of 520 °C significantly improves interface state passivation for SiO[SUB2] /HfO[SUB2]-based/polycrystalline-Si gate stacks as compared to annealing at 420 °C normally used for SiO[SUB2]/polycrystalline-Si gate stacks. We also show that the initial interface state density is dependent upon the interfacial SiO[SUB2] preparation, whereby a chemically grown oxide has a higher initial interface state density as compared to a thermally grown oxide.
ACCESSION #
10281587

 

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