Passivation and interface state density of SiO[sub 2]/HfO[sub 2]-based/polycrystalline-Si gate stacks

Carter, R. J.; Cartier, E.; Kerber, A.; Pantisano, L.; Schram, T.; De Gendt, S.; Heyns, M.
July 2003
Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p533
Academic Journal
We demonstrate that a forming gas annealing temperature of 520 °C significantly improves interface state passivation for SiO[SUB2] /HfO[SUB2]-based/polycrystalline-Si gate stacks as compared to annealing at 420 °C normally used for SiO[SUB2]/polycrystalline-Si gate stacks. We also show that the initial interface state density is dependent upon the interfacial SiO[SUB2] preparation, whereby a chemically grown oxide has a higher initial interface state density as compared to a thermally grown oxide.


Related Articles

  • Characterization and modeling of the nitrogen passivation of interface traps in SiO[sub 2]/4H–SiC. McDonald, K.; Weller, R. A.; Pantelides, S. T.; Feldman, L. C.; Chung, G. Y.; Tin, C. C.; Williams, J. R. // Journal of Applied Physics;3/1/2003, Vol. 93 Issue 5, p2719 

    The relationship between nitrogen content and interface trap density (D[sub it]) in SiO[sub 2]/4H-SiC near the conduction band has been quantitatively determined. Nitridation using NO significantly reduces D[sub it] near the conduction band, but the effect saturates after ≈2.5 × 10[sup...

  • Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide. Driad, R.; Sah, R. E.; Schmidt, R.; Kirste, L. // Applied Physics Letters;1/2/2012, Vol. 100 Issue 1, p014102 

    We present structural, stress, and electrical properties of plasma assisted e-beam evaporated hafnium dioxide (HfO2) layers on n-type InP substrates. These layers have subsequently been used for surface passivation of InGaAs/InP heterostructure bipolar transistors either alone or in combination...

  • Electron paramagnetic resonance and capacitance-voltage studies of ultraviolet irradiated Si-SiO2 interfaces. Brower, K. L.; Schubert, W. K.; Seager, C. H. // Journal of Applied Physics;7/1/1990, Vol. 68 Issue 1, p366 

    Presents information on a study which examined the effect of ultraviolet irradiation of hydrogen passivated silicon-silicon oxide interfaces using electron paramagnetic resonance. Methods; Results; Discussion.

  • Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide. Saint-Cast, Pierre; Kania, Daniel; Hofmann, Marc; Benick, Jan; Rentsch, Jochen; Preu, Ralf // Applied Physics Letters;10/12/2009, Vol. 95 Issue 15, p151502 

    Aluminum oxide layers can provide excellent passivation for lowly and highly doped p-type silicon surfaces. Fixed negative charges induce an accumulation layer at the p-type silicon interface, resulting in very effective field-effect passivation. This paper presents highly negatively charged...

  • Hydrogen–dopant interactions in SiGe and strained Si. Tsetseris, L.; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T. // Applied Physics Letters;6/21/2010, Vol. 96 Issue 25, p251905 

    The appearance of carrier traps and the deactivation of dopants are typical hydrogen-related phenomena that are of prime importance to the reliability of traditional Si-based devices. Here we probe with first-principles calculations, the dynamics of hydrogen as individual impurities or in...

  • Dopant local bonding and electrical activity near Si(001)-oxide interfaces. Zhiyong Zhou; Steigerwald, Michael L.; Friesner, Richard A.; Brus, Louis; Hybertsen, Mark S. // Journal of Applied Physics;10/1/2005, Vol. 98 Issue 7, p076105 

    Electronic structure calculations based on a density-functional approach have been performed for P, As, B, and Al subsitutional dopants near the Si(001)-oxide interface. The structures are geometrically optimized for each charge state. P and As geometries show a strong distortion when neutral,...

  • Interfacial characteristics and band alignments for ZrO2 gate dielectric on Si passivated p-GaAs substrate. Dalapati, Goutam Kumar; Sridhara, Aaditya; Wong, Andrew See Weng; Chia, Ching Kean; Lee, Sung Joo; Chi, Dongzhi // Applied Physics Letters;12/10/2007, Vol. 91 Issue 24, p242101 

    The interfacial characteristics and band alignments of high-k ZrO2 on p-GaAs have been investigated by using x-ray photoelectron spectroscopy and electrical measurements. It has been demonstrated that the presence of Si interfacial passivation layer (IPL) improves GaAs metal-oxide-semiconductor...

  • Sulfur passivation effect on HfO2/GaAs interface: A first-principles study. Weichao Wang; Cheng Gong; Bin Shan; Wallace, Robert M.; Kyeongjae Cho // Applied Physics Letters;6/6/2011, Vol. 98 Issue 23, p232113 

    The impact of sulfur passivation on the structural and electronic properties of the HfO2/GaAs interface is investigated by density functional theory with a hybrid functional. The gap states at the HfO2/GaAs interface arise from three major contributions: Ga 3+ and partial oxidation, As-As...

  • The three-state lattice gas as model for binary gas–liquid systems. Meijer, Paul H. E.; Napiórkowski, Marek // Journal of Chemical Physics;5/15/1987, Vol. 86 Issue 10, p5771 

    This paper deals with the three-state lattice model as applied to binary liquid–gas systems. Schouten, ten Seldam, and Trappeniers [Physica 73, 556 (1974)] used this model to describe the transition between the liquid phases as well as the gas–gas separation when varying the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics