TITLE

Scaling behavior of ferroelectric hysteresis loop in pulsed-laser-deposited SrBi[sub 2]Ta[sub 2]O[sub 9] thin film

AUTHOR(S)
Park, Jong-Ho; Kim, Chung-Sik; Choi, Byung-Chun; Moon, Byung Kee; Jeong, Jung Hyun; Kim, Ill Won
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p536
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ferroelectric SrBi[SUB2]Ta[SUB2]O[SUB9] thin films were grown on a highly oriented Pt/Ti/SiO[SUB2]/Si substrates using pulsed laser ablation. The hysteresis loop of ferroelectric SrBi[SUB2]Ta[SUB2]O[SUB9] was studied as a function of applied field amplitude. A scaling analysis of ferroelectric hysteresis loop area showed A⊥E[SUPα. The value of scaling exponent, α = 0.40, is not similar to the reported theoretical and experimental values. This result shows the possibility that both ferroelectric bulk and thin-film systems may have different universal behaviors. Influence of potential in the surface of SrBi[SUB2]Ta[SUB2]O[SUB9] thin film was measured in the dc applied field range from 0 to 8 V by using electro force microscopy. Roughness of surface potential of SrBi[SUB2]Ta[SUB2]O[SUB9] thin film changed rapidly around the coercive voltage, V[SUBc] ∼ 1.5 V. It is believed that the switching effect of SrBi[SUB2]Ta[SUB2]O[SUB9] thin film includes surface polarization at the surface of the thin film as well as pure spontaneous polarization in the bulk.
ACCESSION #
10281586

 

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