Scaling behavior of ferroelectric hysteresis loop in pulsed-laser-deposited SrBi[sub 2]Ta[sub 2]O[sub 9] thin film

Park, Jong-Ho; Kim, Chung-Sik; Choi, Byung-Chun; Moon, Byung Kee; Jeong, Jung Hyun; Kim, Ill Won
July 2003
Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p536
Academic Journal
Ferroelectric SrBi[SUB2]Ta[SUB2]O[SUB9] thin films were grown on a highly oriented Pt/Ti/SiO[SUB2]/Si substrates using pulsed laser ablation. The hysteresis loop of ferroelectric SrBi[SUB2]Ta[SUB2]O[SUB9] was studied as a function of applied field amplitude. A scaling analysis of ferroelectric hysteresis loop area showed A⊥E[SUPα. The value of scaling exponent, α = 0.40, is not similar to the reported theoretical and experimental values. This result shows the possibility that both ferroelectric bulk and thin-film systems may have different universal behaviors. Influence of potential in the surface of SrBi[SUB2]Ta[SUB2]O[SUB9] thin film was measured in the dc applied field range from 0 to 8 V by using electro force microscopy. Roughness of surface potential of SrBi[SUB2]Ta[SUB2]O[SUB9] thin film changed rapidly around the coercive voltage, V[SUBc] ∼ 1.5 V. It is believed that the switching effect of SrBi[SUB2]Ta[SUB2]O[SUB9] thin film includes surface polarization at the surface of the thin film as well as pure spontaneous polarization in the bulk.


Related Articles

  • Ferroelectric thin films with polarization gradients normal to the growth surface. Mantese, Joseph V.; Schubring, Norman W. // Applied Physics Letters;7/31/1995, Vol. 67 Issue 5, p721 

    Details the formation of ferroelectric films with polarization gradients normal to growth surface upon coupling of temperature gradients to the polarization vector in ferroelectric materials. Variation of potential across the structure with temperature; Effect of polarization gradient on...

  • Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes. Aggarwal, S.; Dhote, A. M.; Ramesh, R.; Warren, W. L.; Pike, G. E.; Dimos, D.; Raymond, M. V.; Tuttle, B. A.; Evans, J. T. // Applied Physics Letters;10/21/1996, Vol. 69 Issue 17, p2540 

    We report on the thermally activated hysteresis relaxation effects in (La,Sr)CoO3/ (Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 thin film ferroelectric capacitors. Films cooled in oxygen deficient ambients exhibit a marked voltage offset in the hysteresis loops. Upon the application of a dc bias voltage or...

  • Vertical drift of P–E hysteresis loop in asymmetric ferroelectric capacitors. Zheng, Lirong; Lin, Chenglu; Xu, W.-Ping; Okuyama, Masanori // Journal of Applied Physics;6/1/1996, Vol. 79 Issue 11, p8634 

    Provides information on a study that analyzed the origin of vertical drift in P-E hysteresis loops of ferroelectric thin film capacitors by applying a simple circuit model. Details on asymmetric ferroelectric capacitors; Distortion of hysteresis loops resulting from asymmetric structure;...

  • Nanoscale observation of photoinduced domain pinning and investigation of imprint behavior in ferroelectric thin films. Gruverman, A.; Rodriguez, B. J.; Nemanich, R. J.; Kingon, A. I. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2734 

    Piezoresponse force microscopy has been used to investigate the nanoscale mechanism of imprint behavior of ferroelectric PbTiO[sub 3] thin films by studying the photoinduced changes in the hysteresis loops of individual grains. Illumination of the film with UV light resulted in a voltage shift...

  • Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive.... Watanabe, Yukio // Applied Physics Letters;1/2/1995, Vol. 66 Issue 1, p28 

    Examines leakage currents in epitaxial ferroelectric/perovskite conductor heterostructures demonstrating reproducible diode properties having hysteresis. Appearance of hysteresis in forward bias; Discussion of the write and erase speeds of the diode; Significance of the origin of the effect.

  • Abnormal ferroelectric properties of compositionally graded Pb(Zr,Ti)O[sub 3] thin films with LaNiO[sub 3] bottom electrodes. Bao, Dinghua; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu; Yao, Xi // Journal of Applied Physics;7/1/2001, Vol. 90 Issue 1, p506 

    We report abnormal ferroelectric properties of compositionally graded Pb(Zr,Ti)O[sub 3] thin films on LaNiO[sub 3]-coated SiO[sub 2]/Si substrates, where Pb(Zr,Ti)O[sub 3] and LaNiO[sub 3] films were prepared by a metalorganic decomposition technique and a sol-gel technique, respectively. It was...

  • Computation of the polarization due to the ferroelectric layer in a stacked capacitor from Sawyer–Tower hysteresis measurements. Bouregba, R.; Poullain, G. // Journal of Applied Physics;1/1/2003, Vol. 93 Issue 1, p522 

    Reducing thickness of thin ferroelectric films typically comes with an apparent degradation of their dielectric and ferroelectric properties. In practice one observes a marked decrease of the linear dielectric constant and of remanent and maximum polarizations which may arise from the presence...

  • Competition between ferroelectric and semiconductor properties in Pb(Zr[sub 0.65]Ti[sub 0.35])O[sub 3] thin films deposited by sol–gel. Boerasu, I.; Pintilie, L.; Pereira, M.; Vasilevskiy, M. I.; Gomes, M. J. M. // Journal of Applied Physics;4/15/2003, Vol. 93 Issue 8, p4776 

    Asymmetric metal-ferroelectric-metal (MFM) structures were manufactured by sol-gel deposition of a lead zirconate-titanate (PZT with Zr/Ti ratio 65/35) film on Pt-coated Si, with a Au top electrode. The average remnant polarization of 9 µC/cm² and the coercive field of 39 kV/cm were...

  • Wake-up effects in Si-doped hafnium oxide ferroelectric thin films. Zhou, Dayu; Xu, Jin; Li, Qing; Guan, Yan; Cao, Fei; Dong, Xianlin; Müller, Johannes; Schenk, Tony; Schröder, Uwe // Applied Physics Letters;11/4/2013, Vol. 103 Issue 19, p192904 

    Hafnium oxide based ferroelectric thin films have shown potential as a promising alternative material for non-volatile memory applications. This work reports the switching stability of a Si-doped HfO2 film under bipolar pulsed-field operation. High field cycling causes a 'wake-up' in virgin...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics