TITLE

Nanoring formation by direct-write inorganic electron-beam lithography

AUTHOR(S)
Jiang, N.; Hembree, G. G.; Spence, J. C. H.; Qiu, J.; Garcia de Abajo, F. J.; Silcox, J.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p551
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A direct-write inorganic lithography technique is described which is capable of forming nanoscale rings of amorphous metals and semiconductors in glasses. Near-edge electron energy loss spectroscopy and electron diffraction using a subnanometer probe are used to analyze the composition and formation mechanism of these nanorings. The optical absorption cross section of one ring is calculated by multiple scattering methods. Applications in quantum electronics and the design of media with dielectric properties are suggested.
ACCESSION #
10281581

 

Related Articles

  • Metrology and Optical Characterization of Plasma Enhanced Chemical Vapor Deposition, (PECVD), low temperature deposited Amorphous Carbon films. Ferrieu, F.; Chaton, C.; Neira, D.; Beitia, C.; Mota, L. Proenca; Papon, A. M.; Tarnowka, A. // AIP Conference Proceedings;9/26/2007, Vol. 931 Issue 1, p99 

    Amorphous Carbon films deposited by PECVD (RF) have recently been introduced as a new material for semiconductor processing, e.g. in 193 nm ARC lithography [1] and in the DRAM production [2]. A large amount of literature has already been published on with regard to the applications of this class...

  • Electronic transport and metastabilities in P-doped a-Si:H. Agarwal, Pratima; Agarwal, S.C. // Journal of Applied Physics;4/1/1997, Vol. 81 Issue 7, p3214 

    Investigates the effect of thermal and light induced metastabilities on conductivity and thermopower in phosphorus doped hydrogenated amorphous silicon. Conductivity and thermopower measurements; Light soaking; Fast quenching (FQ); Effect of FQ state relaxation during measurements.

  • Relationship between carrier diffusion lengths and defect density in hydrogenated amorphous silicon. Sakata, I.; Yamanaka, M. // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1323 

    Studies the relationship between carrier diffusion lengths and defect density in undoped hydrogenated amorphous silicon. Small-signal lifetime measurement; Dependence of carrier diffusion lengths on defect density; Ratio of drift mobility of electrons to that of holes in a doped silicon under...

  • Doping effect of oxygen or nitrogen impurity in hydrogenated amorphous silicon films. Morimoto, Akiharu; Matsumoto, Minoru; Yoshita, Masahiro; Kumeda, Minoru; Shimizu, Tatsuo // Applied Physics Letters;10/21/1991, Vol. 59 Issue 17, p2130 

    Examines the doping effect of oxygen and nitrogen impurities on hydrogenated amorphous silicon films. Correlation between activation energy and dark conductivity; Influence of impurities on photoresponse time; Formation of trapping states for photoexcited electrons.

  • p-n junctions from sputtered Ge25Se75-xBix films. Kounavis, P.; Mytilineou, E.; Roilos, M. // Journal of Applied Physics;7/15/1989, Vol. 66 Issue 2, p708 

    Presents the preparation and study of p-n junctions from amorphous chalcogenide GeSe[sub3] sputtered films doped with Bi. Conductivity exhibited by amorphous chalcogenide semiconductors; Experimental procedures; Results and discussion; Conclusions.

  • Nonlinear optical response of hydrogenated amorphous silicon films studied by laser induced.... Ribeiro, R.M.; Margulis, W. // Applied Physics Letters;2/27/1995, Vol. 66 Issue 9, p1089 

    Examines the optical properties of hydrogenated amorphous silicon films. Use of transient grating techniques; Determination of carrier lifetime, diffusion coefficient, and effective third order nonlinear susceptibility; Estimation of the electronic and thermal contributions of the gratings.

  • Light-induced effects on doped- and undoped-hydrogenated amorphous silicon. Park, Jin-Seok; Han, Min-Koo; Lee, Chung-Han // Journal of Applied Physics;8/15/1988, Vol. 64 Issue 4, p2107 

    Presents information on a study which discussed the light-induced effects on the electrical and optical properties of undoped- and doped-hydrogenated amorphous silicon (a-Si:H) films. Deposition details of undoped- and doped- A-Si:H; Conductivity changes due to prolonged illumination;...

  • The effect of the flow of silane on the properties of a-Si:H deposited by concentric-electrode radio frequency glow-discharge. Conde, J. P.; Chan, K. K.; Blum, J. M.; Arienzo, M. // Journal of Applied Physics;4/15/1992, Vol. 71 Issue 8, p3990 

    Deals with a study which described a novel concept for preparing highly photosensitive hydrogenated amorphous silicon-based semiconductors. Experimental procedures; Results; Discussion; Conclusion.

  • Optical and electrical properties of nitrogen incorporated amorphous carbon films. Yu, Y. H.; Chen, Z. Y. // Journal of Applied Physics;3/15/2000, Vol. 87 Issue 6, p2874 

    Presents information on a study which investigated the variation of optical and electrical properties of nitrogen-incorporated amorphous-carbon films. Discussion on the influence of nitrogen concentration on the optical band gap of the films; Characterization of amorphous carbon films; Results...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics