n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550–750 °C

Estrada, Sarah; Huntington, Andrew; Stonas, Andreas; Xing, Huili; Mishra, Umesh; DenBaars, Steven; Coldren, Larry; Hu, Evelyn
July 2003
Applied Physics Letters;7/21/2003, Vol. 83 Issue 3, p560
Academic Journal
We recently reported an initial AlGaAs/GaAs/GaN heterojunction bipolar transistor (HBT), formed via wafer fusion of a p-GaAs base to an n-GaN collector. The device was formed by fusion at a high temperature (750 °C) and demonstrated low output current (∼100 A/cm[SUP2]) and low common-emitter current gain (0.5). This letter describes a systematic variation of fusion temperature (550-750 °C) in the formation of the HBT, and reveals the correlation between fusion temperature, base-collector leakage, and emitter-base degradation. With reduced fusion temperatures, devices demonstrate improvements in leakage, output current (∼1 kA/cm[SUP2]), and common-emitter current gain (>1). Optimization of device structure should further improve performance.


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