TITLE

Integrated circuits in silicon carbide for high-temperature applications

AUTHOR(S)
Zetterling, Carl-Mikael
PUB. DATE
May 2015
SOURCE
MRS Bulletin;May2015, Vol. 40 Issue 5, p431
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-temperature electronic applications are presently limited to a maximum operational temperature of 225°C for commercial integrated circuits (ICs) using silicon. One promise of silicon carbide (SiC) is high-temperature operation, although most commercial efforts have targeted high-voltage discrete devices. Depending on the technology choice, several processing challenges are involved in making ICs using SiC. Bipolar, metal oxide semiconductor field-effect transistors, and junction field-effect transistor technologies have been demonstrated in operating temperatures of up to 600°C. Current technology performance and processing challenges relating to making ICs in SiC are reviewed in this article.
ACCESSION #
102575449

 

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