Effects of film polarities on InN growth by molecular-beam epitaxy

Xu, K.; Yoshikawa, A.
July 2003
Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p251
Academic Journal
Effects of the film polarity on InN growth were investigated in molecular-beam epitaxy (MBE). It was found that N-polarity InN could be grown at higher temperatures than In-polarity one. For the In-polarity films, which were grown on Ga-polar GaN template, the highest growth temperature was limited below 500 °C, and the surface morphology and crystal quality tended to be poor mainly because of the tolerated low growth temperature. While for the N-polarity InN films, which were grown on MBE-grown N-polar GaN, the growth temperature could be as high as 600 °C. The step-flow-like growth morphology was achieved for the InN films grown with N polarity at 580 °C. The resulting full widths of half maximum of x-ray rocking curve around InN (002) and (102) reflections were about 200-250 and 950-1100 arc sec, respectively. The photoluminescence of the InN films peaked at 0.697 eV. The recording Hall mobility of InN film grown in N polarity is 1400 cm[SUP2]/V s with a background carrier concentration of 1.56×10[SUP18] cm[SUP-3] at room temperature. For both-polarity films, we found N-rich condition was necessary for the stable InN growth.


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