Stacking-fault-induced intermediate structure in bismuth titanate

Yoneda, Y.; Mizuki, J.; Katayama, R.; Yagi, K.; Terauchi, H.; Hamazaki, S.; Takashige, M.
July 2003
Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p275
Academic Journal
We observed an intermediate structure during the recrystallization process from the amorphous state of Bi[SUB4]Ti[SUB3]O[SUB12] prepared by rapid quenching. The intermediate structure which appears during the recrystallization process consists of two phases; one is pyrochlore Bi[SUB2]Ti[SUB2]O[SUB7] phase and the other is a stacking-fault-induced structure under the excessive Bi condition. The microstructure of the stacking-fault-induced structure was investigated by synchrotron x-ray diffraction. In the case of a large number of Bi[SUB2]O[SUB2], some are inserted between the pseudoperovskite layers of Bi[SUB4]Ti[SUB3]O[SUB12], and a nonstoichiometric Bi[SUB2]WO[SUB6]-like structure is stabilized.


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