Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy

Rommeluère, J. F.; Svob, L.; Jomard, F.; Mimila-Arroyo, J.; Lusson, A.; Sallet, V.; Marfaing, Y.
July 2003
Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p287
Academic Journal
The electrical activity of nitrogen as an acceptor in ZnO has been investigated in two ways. First, nitrogen was introduced by means of diallylamine during metalorganic vapor phase epitaxy (MOVPE) yielding incorporation of nitrogen in the range 10[SUP16] - 10[SUP21] cm[SUP-3]. This led to significant compensation of the natural donors with a minimum electron concentration of 5×10[SUP14] cm[SUP-3]. Second, diffusion of nitrogen was carried out on undoped MOVPE layers under high pressure conditions stemming from the decomposition of NH[SUB4]NO[SUB3]. Conversion to p-type conductivity was observed in a systematic way with measured hole concentrations up to 6.5×10[SUP17] cm[SUP-3].


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