Strain profiling of HfO[sub 2]/Si(001) interface with high-resolution Rutherford backscattering spectroscopy

Nakajima, K.; Joumori, S.; Suzuki, M.; Kimura, K.; Osipowicz, T.; Tok, K. L.; Zheng, J. Z.; See, A.; Zhang, B. C.
July 2003
Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p296
Academic Journal
Strain depth profiles in HfO[SUB2] (3 nm)/Si(001) prepared by atomic-layer chemical vapor deposition have been measured using high-resolution Rutherford backscattering spectroscopy in combination with a channeling technique. It is found that the Si lattice is compressed in the vertical direction around the interface. The observed maximum strain is about 1% at the interface and the strained region extends down to ∼3 nm from the interface.


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