Single-electron transistor based on modulation-doped SiGe heterostructures

Notargiacomo, A.; Di Gaspare, L.; Scappucci, G.; Mariottini, G.; Evangelisti, F.; Giovine, E.; Leoni, R.
July 2003
Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p302
Academic Journal
We report the characterization of a single-electron transistor based on bended wires fabricated on modulation-doped SiGe two-dimensional electron gas. Electrical measurements show a diamond-shaped stability plot and a nonperiodic sequence of conductance peaks. The device behavior suggests the presence of disorder-induced multiple islands along the wire. Conductance oscillations remain well pronounced above liquid helium temperature.


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