TITLE

Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO[sub 2] dielectric

AUTHOR(S)
Yang, C. W.; Fang, Y. K.; Chen, C. H.; Chen, S. F.; Lin, C. Y.; Lin, C. S.; Wang, M. F.; Lin, Y. M.; Hou, T. H.; Yao, L. G.; Chen, S. C.; Liang, M. S.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p308
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hafnium dioxide (HfO[SUB2]) gate dielectrics formed by the atomic layer deposition (ALD) process were fabricated to investigate the flatband voltage shift (ΔV[SUBFB]) relative to SiO[SUB2]. It is found that the direction of DVFB depends on the Fermi level position in the gate material, which shows respective positive and negative shifts in n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs), regardless of the substrate type. The opposite direction in the flatband voltage shift is attributed to both acceptor- and donor-like interface states existing at the interface between the polycrystalline-silicon (poly-Si) gate and HfO[SUB2] dielectric. A model is proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.
ACCESSION #
10220423

 

Related Articles

  • In situ study of HfO2 atomic layer deposition on InP(100). Dong, H.; Brennan, B.; Zhernokletov, D.; Kim, J.; Hinkle, C. L.; Wallace, R. M. // Applied Physics Letters;4/29/2013, Vol. 102 Issue 17, p171602 

    The interfacial chemistry of the native oxide and chemically treated InP samples during atomic layer deposition (ALD) HfO2 growth at 250 °C has been studied by in situ X-ray photoelectron spectroscopy. The In-oxide concentration is seen to gradually decrease on the native oxide and acid...

  • Normally-off HfO2-gated diamond field effect transistors. Liu, J. W.; Liao, M. Y.; Imura, M.; Koide, Y. // Applied Physics Letters;8/26/2013, Vol. 103 Issue 9, p092905 

    A normally-off hydrogenated-diamond (H-diamond) field effect transistor (FET) using a HfO2 gate oxide is demonstrated. The HfO2 gate oxide has a bilayer structure which is fabricated by a sputter-deposition (SD) technique on a thin buffer layer prepared by an atomic layer deposition (ALD)...

  • Electron detrapping characteristics in positive bias temperature stressed n-channel metal-oxide-semiconductor field-effect transistors with ultrathin HfSiON gate dielectrics. Zhu, Shiyang; Nakajima, Anri // Applied Physics Letters;7/16/2007, Vol. 91 Issue 3, p033501 

    Electrons trapped in the HfSiON gate dielectrics of n-channel metal-oxide-semiconductor field-effect transistors induced by positive bias temperature stress start to decay when the stress is interrupted or an opposite (recovery) voltage is applied. The decay begins with a quick detrapping within...

  • Electronic structure and band alignment at the HfO2/4H-SiC interface. Tanner, Carey M.; Choi, Jongwoo; Chang, Jane P. // Journal of Applied Physics;2/1/2007, Vol. 101 Issue 3, p034108 

    To evaluate the potential of HfO2 as a gate dielectric in SiC power metal-oxide-semiconductor field effect transistors (MOSFETs), the band alignment at the HfO2/4H-SiC interface was determined by x-ray photoelectron spectroscopy (XPS) measurements and first-principles calculations using density...

  • Assessing hafnium on hafnia as an oxygen getter. O'Hara, Andrew; Bersuker, Gennadi; Demkov, Alexander A. // Journal of Applied Physics;2014, Vol. 115 Issue 18, p183703-1 

    Hafnium dioxide or hafnia is a wide band gap dielectric used in a range of electronic applications from field effect transistors to resistive memory. In many of these applications, it is important to maintain control over oxygen stoichiometry, which can be realized in practice by using a metal...

  • Challenges for 10 nm MOSFET process integration. Östling, Mikael; Malm, Bengt Gunnar; Haartman, Martin von; Hållstedt, Julius; Zhen Zhang; Hellström, Per-Erik; Zang, Shili // Journal of Telecommunications & Information Technology;2007, Vol. 2007 Issue 2, p25 

    An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-k gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced...

  • Recent progress in ab initio simulations of hafnia-based gate stacks. Zhu, H.; Tang, C.; Fonseca, L.; Ramprasad, R. // Journal of Materials Science;Nov2012, Vol. 47 Issue 21, p7399 

    The continuous size downscaling of complementary metal-oxide-semiconductor (CMOS) transistors has led to the replacement of SiO with a HfO-based high dielectric constant (or high- k) oxide, and the polysilicon electrode with a metal gate. The approach to this technological evolution has spurred...

  • Fluorine passivation in poly-Si/TaN/HfO2 through ion implantation. Zhang, M. H.; Zhu, F.; Lee, T.; Kim, H. S.; Ok, I. J.; Thareja, G.; Yu, L.; Lee, Jack C. // Applied Physics Letters;10/2/2006, Vol. 89 Issue 14, p142909 

    Fluorine (F) passivation in poly-Si/TaN/HfO2/p-Si gate stacks through gate ion implantation has been studied. It has been found that when the TaN thickness was less than 15 nm, the mobility and subthreshold swing improved significantly in HfO2 n-channel metal-oxide-semiconductor field effect...

  • Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics. Pengpeng Ren; Runsheng Wang; Xiaobo Jiang; Yingxin Qiu; Changze Liu; Ru Huang // Applied Physics Letters;6/30/2014, Vol. 104 Issue 26, p1 

    In this Letter, the coupling effect between multi-traps in HfO2 gate dielectrics is experimentally studied in scaled high-κ/metal-gate metal oxide semiconductor field effect transistors (MOSFETs). Deviated from conventional understanding, mechanism that affects trap coupling is found, which...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics