Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO[sub 2] dielectric

Yang, C. W.; Fang, Y. K.; Chen, C. H.; Chen, S. F.; Lin, C. Y.; Lin, C. S.; Wang, M. F.; Lin, Y. M.; Hou, T. H.; Yao, L. G.; Chen, S. C.; Liang, M. S.
July 2003
Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p308
Academic Journal
Hafnium dioxide (HfO[SUB2]) gate dielectrics formed by the atomic layer deposition (ALD) process were fabricated to investigate the flatband voltage shift (ΔV[SUBFB]) relative to SiO[SUB2]. It is found that the direction of DVFB depends on the Fermi level position in the gate material, which shows respective positive and negative shifts in n-type and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs), regardless of the substrate type. The opposite direction in the flatband voltage shift is attributed to both acceptor- and donor-like interface states existing at the interface between the polycrystalline-silicon (poly-Si) gate and HfO[SUB2] dielectric. A model is proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.


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