TITLE

Single-electron tunneling in InP nanowires

AUTHOR(S)
De Franceschi, S.; van Dam, J. A.; Bakkers, E. P. A. M.; Feiner, L. F.; Gurevich, L.; Kouwenhoven, L. P.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p344
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor-liquid-solid process. Our InP wires are n-type doped with diameters in the 40-55-nm range and lengths of several micrometers. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti/Al electrodes. We obtain contact resistances as low as ∼10 kV, with minor temperature dependence. The distance between the electrodes varies between 0.2 and 2 mm. The electron density in the wires is changed with a back gate. Low-temperature transport measurements show Coulomb-blockade behavior with single-electron charging energies of ∼1 meV. We also demonstrate energy quantization resulting from the confinement in the wire.
ACCESSION #
10220411

 

Related Articles

  • On Effective Electron Mass of Silicon Field Structures at Low Electron Densities. Dolgopolov, V. T. // JETP Letters;9/25/2002, Vol. 76 Issue 6, p377 

    The trial wave function method developed in [10, 11] for the case of a narrow s band in a perfect crystal is adapted for the calculation of the concentration dependence of the effective mass and the Land� factor in a two-dimensional electron system of low density. It has been found that the...

  • Thermal ionization of impurity centers in Fe-doped Bi[sub 12]SiO[sub 20] and Bi[sub 12]GeO[sub 20] crystals. Panchenko, T. V. // Physics of the Solid State;Jun99, Vol. 41 Issue 6, p916 

    The spectral and temperature dependence of the optical absorption and thermally stimulated depolarization currents in Fe-doped Bi[sub 12]SiO[sub 20] and Bi[sub 12]GeO[sub 20] crystals are investigated in the photon energy range 1.36-3.46 eV and temperature 85-750 K. The results show thermally...

  • Kinetics of electric-field-enhanced crystallization of amorphous silicon in contact with Ni catalyst. Kim, Hae-Yeol; Kim, Binn; Bae, Jong-Uk; Hwang, Kwang-Jo; Seo, Hyun-Sik; Kim, Chang-Dong // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5180 

    Electric-field-enhanced crystallization of hydrogenated amorphous silicon in contact with nickel catalyst (Ni/a-Si:H) has been investigated. In order to elucidate the crystallization kinetics quantitatively, in situ conductivity measurement was used. With the change of Ni dose (4 × 10[sup...

  • Metal-Catalyst-Free Synthesis and Characterization of Single-Crystalline Silicon Oxynitride Nanowires. Shuang Xi; Tielin Shi; Liangliang Xu; Zirong Tang; Dan Liu; Xiaoping Li; Shiyuan Liu // Journal of Nanomaterials;2012, p1 

    Large quantities of single-crystal silicon oxynitride nanowires with high N concentration have been synthesized directly on silicon substrate at 1200°C without using any metal catalyst. The diameter of these ternary nanowires is ranging from 10 to 180nm with log-normal distribution, and the...

  • Properties of 6H–SiC crystals grown by hydrogen-assisted physical vapor transport. Li, Q.; Polyakov, A. Y.; Skowronski, M.; Fanton, M. A.; Cavalero, R. C.; Ray, R. G.; Weiland, B. E. // Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p202102 

    Effects of hydrogen addition to the growth ambient during physical vapor transport (PVT) growth of 6H–SiC were investigated using secondary ion mass spectrometry, deep level transient spectroscopy, and Hall effect measurement. The background nitrogen concentration and the free electron...

  • The statistical shift of the chemical potential causing anomalous conductivity in hydrogenated microcrystalline silicon. Lof, R. W.; Schropp, R. E. I. // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p063714 

    The behavior of the electrical conductivity in hydrogenated microcrystalline silicon (μc-Si:H) that is frequently observed is explained by considering the statistical shift in the chemical potential as a function of the crystalline fraction (Xc), the dangling bond density (Ndb), and the...

  • Probing of the Shallow Donor and Acceptor Wave Functions in Silicon Carbide and Silicon through an EPR Study of Crystals with a Modified Isotopic Composition. Baranov, P. G.; Ber, B. Ya.; Godisov, O. N.; Il'in, I. V.; Ionov, A. N.; Mokhov, E. N.; Muzafarova, M. V.; Kaliteevskiĭ, A. K.; Kaliteevskiĭ, M. A.; Kop'ev, P. S. // Physics of the Solid State;Dec2005, Vol. 47 Issue 12, p2219 

    The spatial distributions of the unpaired-electron wave functions of shallow N donors in SiC crystals and of shallow P and As donors in silicon crystals were determined by studying crystals with a modified content of the 29Si and 13C isotopes having a nonzero nuclear magnetic moment. As follows...

  • A helium discharge with neutral gas flow: Comparison of theory with experiments. Karditsas, Panayiotis J. // Journal of Applied Physics;9/15/1990, Vol. 68 Issue 6, p2667 

    Examines electrode-sheath coupling including an electrode and a sheath capacitance modeled by the radio-frequency excited helium discharge. Value of the electron density at the sheath edge; Calculation of the plasma parameters for the uniform column; Variation of the voltage drop between the...

  • Depletion-mode TDDB for n-type MOS capacitors of 4H-SiC. Tomokatsu Watanabe; Shiro Hino; Yuji Ebiike; Naruhisa Miura; Masayuki Imaizumi; Satoshi Yamakawa // Materials Science Forum;2014, Vol. 778-780, p517 

    TDDB for n-type 4H-SiC MOS capacitors depleted by DC bias (named as depletion-mode TDDB) has been investigated. The lifetime distribution can apparently be classified into two groups: shorter and longer tBD. Breakdown for the shorter tBD occurs at a point close to a threading dislocation. In...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics