Single-electron tunneling in InP nanowires

De Franceschi, S.; van Dam, J. A.; Bakkers, E. P. A. M.; Feiner, L. F.; Gurevich, L.; Kouwenhoven, L. P.
July 2003
Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p344
Academic Journal
We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor-liquid-solid process. Our InP wires are n-type doped with diameters in the 40-55-nm range and lengths of several micrometers. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti/Al electrodes. We obtain contact resistances as low as ∼10 kV, with minor temperature dependence. The distance between the electrodes varies between 0.2 and 2 mm. The electron density in the wires is changed with a back gate. Low-temperature transport measurements show Coulomb-blockade behavior with single-electron charging energies of ∼1 meV. We also demonstrate energy quantization resulting from the confinement in the wire.


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