Fabrication of 1.4-kV mesa-type p[sup +]–n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate

Tanaka, Yasunori; Nishizawa, Shin-ichi; Fukuda, Kenji; Arai, Kazuo; Ohno, Toshiyuki; Oyanagi, Naoki; Suzuki, Takaya; Yatsuo, Tsutomu
July 2003
Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p377
Academic Journal
Using our own substrate growth and epitaxial growth techniques, we fabricated a 1.4-kV mesa-type 6H-SiC p[SUP+] - n diode with an ideal avalanche breakdown and without forward degradation. The 6H-SiC substrates were grown on Lely crystals with no micropipes and only minimal defects. A p[SUP+] - n junction was fabricated by chemical vapor deposition with p([SUP1]/n[SUP-] epitaxial films. We obtained 1.4-kV breakdown voltage, consistent with the ideal breakdown voltage calculated from the thickness and doping concentration of the drift layer. The application of 200-A/cm[SUP2] current stress in the forward direction produced no degradation, which is often observed with p - n diodes on normal substrates.


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