Self-assembled subnanolayers as interfacial adhesion enhancers and diffusion barriers for integrated circuits

Ramanath, G.; Cui, G.; Ganesan, P. G.; Guo, X.; Ellis, A. V.; Stukowski, M.; Vijayamohanan, K.; Doppelt, P.; Lane, M.
July 2003
Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p383
Academic Journal
Preserving the structural and functional integrity of interfaces and inhibiting deleterious chemical interactions are critical for realizing devices with sub-50 nm thin films and nanoscale units. Here, we demonstrate that ∼0.7-nm-thick self-assembled monolayers (SAMs) comprising mercapto-propyl-tri-methoxy-silane (MPTMS) molecules enhance adhesion and inhibit Cu diffusion at Cu/SiO[SUB2] structures used in device metallization. Cu/SAM/SiO[SUB2]/Si(001) structures show three times higher interface debond energy compared to Cu/SiO[SUB2] interfaces due to a strong) chemical interaction between Cu and S termini of the MPTMS SAMs. This interaction immobilizes Cu at the Cu/SAM interface and results in a factor-of-4 increase in Cu-diffusion-induced failure times compared with that for structures without SAMs.


Related Articles

  • Air/Solution Interface and Adsorption - Solution for the Gibbs Paradox. Moroi, Yoshikiyo // Croatica Chemica Acta;Nov2007, Vol. 80 Issue 3/4, p381 

    Several experimental evidences differentiating an insoluble monomolecular film just on the air/ water interface from an adsorbed film of soluble amphiphile solution are presented in order to suggest that the adsorbed film is not located at the air/solution interface. The difference between the...

  • Oxidation induced AlAs/GaAs superlattice disordering. Chang, J.C.P.; Kavanagh, K.L. // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1235 

    Examines the occurrence of rapid interdiffusion at thin film interfaces. Diffusion of germanium and silicon after oxidation; Detection of negligible diffusion in forming gas; Correlation among dissociation, out-diffusion, and oxidation of the gallium arsenide substrates.

  • Nucleation and growth during reactions in multilayer Al/Ni films: The early stage of Al3Ni formation. Ma, E.; Thompson, C. V.; Clevenger, L. A. // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2211 

    Presents a study which examined the solid-state interdiffusion reactions at Al/Ni interfaces in multilayer films. Details of experimental techniques commonly used to study interfacial reactions; Description of isothermal calometric analysis; Implications on phase selection in thin-film reactions.

  • Marker studies in the reactions of W/Al couples. Wang, S. Q.; Mayer, J. W. // Journal of Applied Physics;3/15/1990, Vol. 67 Issue 6, p2939 

    Investigates the diffusing species in the reaction of thin tungsten (W) films with aluminum (Al) overlayers in vacuum using Rutherford backscattering spectrometry (RBS) and scanning electron microscopy. Details of experimental techniques used; Composition and thickness of arsenic-deposited...

  • Stability study of passive film on copper surface as a function of anodic potential. NASEER, Amtul; KHAN, Athar Yaseen // Turkish Journal of Chemistry;2011, Vol. 35 Issue 2, p225 

    No abstract available.

  • Electromigration behavior of 60 nm dual damascene Cu interconnects. Pyun, Jung Woo; Baek, Won-Chong; Zhang, Lijuan; Im, Jay; Ho, Paul S.; Smith, Larry; Smith, Gregory // Journal of Applied Physics;Nov2007, Vol. 102 Issue 9, p093516 

    Electromigration (EM) reliability was investigated for Cu fine lines fabricated using a SiON trench filling process down to 60 nm in linewidth. EM was observed to be dominated by intrinsic failures due to void formation in the line trench. The lifetimes of 60 nm lines were longer than those of...

  • Organic thin-film transistors with poly(methyl silsesquioxane) modified dielectric interfaces. Yiliang Wu; Ping Liu; Ong, Beng S. // Applied Physics Letters;7/3/2006, Vol. 89 Issue 1, p013505 

    Poly(methyl silsesquioxane) modification of SiO2 gate dielectric surface leads to significantly improved performance of polythiophene-based organic thin-film transistors. The beneficial effects of this surface modification on transistor performance are often significantly greater than those of...

  • Fluorescence spectroscopy of ultrathin molecular organic films on surfaces. Müller, M.; Langner, A.; Krylova, O.; Moal, E.; Sokolowski, M. // Applied Physics B: Lasers & Optics;Oct2011, Vol. 105 Issue 1, p67 

    We review our recent experiments by linear optical spectroscopy in the visible spectral range on interface controlled monolayers and thin films of π-conjugated organic molecules on well-defined surfaces. In particular, cw fluorescence and fluorescence excitation spectroscopy are considered....

  • Interfacial thermal resistance of Au/SiO2 produced by sputtering method. Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Tanaka, Miyoko; Shimono, Masato; Yamazaki, Masayoshi // High Temperatures -- High Pressures;2008, Vol. 37 Issue 1, p31 

    Interfacial thermal resistance between sputtered Au films and SiO2 single crystal substrates produced under different sputtering conditions has been measured by 2 omega method, and compared with the calculation results of phonon acoustic mismatch model and phonon diffusion mismatch model. The...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics