Silicon-based field-effect-transistor cantilever for surface potential mapping

Suh, Moon Suhk; Choi, J. H.; Kuk, Young; Jung, J.
July 2003
Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p386
Academic Journal
A silicon-based scanning probe with a field effect transistor (FET) has been developed. The FET is integrated onto an atomic force microscope cantilever with a sharpened tip. The commonly used complementary-metal-oxide-semiconductor process has been employed to construct the FET using a silicon-on-insulator wafer. The probe is used to measure a surface potential with a resolution of <300 nm when determined by the edge of patterned SiO[SUB2] islands. The probe can be also used to detect local properties on semiconductor surfaces, such as isolated charge distributions on a surface or at subsurface.


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