Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition

Pan, M.; Steckl, A. J.
July 2003
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p9
Academic Journal
Bright red emission has been obtained at room temperature from Eu-doped GaN films pumped by 325 nm HeCd laser. The luminescent films were grown by metalorganic chemical vapor deposition on GaN/Al[SUB2]O[SUB3] substrates. Trimethylgallium (TMGa), ammonia (NH[SUB3]), and europium 2,2,4,4-tetramethyl-3,5-heptanedionate were used as sources for Ga, N, and Eu dopant, respectively. The influence of the V/III ratio during growth on the photoluminescence (PL) intensity has been studied using a fixed TMGa flow rate of 92 μmol/min and varying the NH[SUB3] flow rate. The film growth rate (∼2 μm/h) is nearly constant with V/III ratio over the range from ∼30 to ∼1000. The Eu incorporation in GaN films was found to decrease with increasing V/III ratio. The Eu PL intensity (normalized to the Eu concentration) exhibited a maximum at a V/III ratio of ∼100.


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