High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy

Tansu, Nelson; Quandt, Andrew; Kanskar, Manoj; Mulhearn, William; Mawst, Luke J.
July 2003
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p18
Academic Journal
Comtinuous-wave (cw) operation of organometallic vapor phase epitaxy-grown In[SUB0.4]Ga[SUB0.6]As[SUB0.995]N[SUB0.005] quantum well (QW) lasers has been realized, at a room-temperature near-threshold emission wavelength of 1.295 mm, with a threshold-current density of 220 A/cm[SUP2] for 2000 μm cavity-length (L[SUBcav]) devices. A threshold current density of only 615 A/cm[SUP2] was achieved for cw operation at a temperature of 100°C, with an emission wavelength of 1.331 μm. A maximum cw-output power of 1.8 W was obtained for InGaAsN QW lasers with cavity lengths of 1000 and 2000 μm, at a heat-sink temperature of 20°C.


Related Articles

  • Spatial mode structure of broad-area semiconductor quantum well lasers. Chang-Hasnain, C. J.; Kapon, E.; Bhat, R. // Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p205 

    The spatial mode characteristics of gain-guided broad-area quantum well lasers grown by organometallic chemical vapor deposition were investigated experimentally. GaAs/AlGaAs quantum well lasers grown on 6°-off (100) oriented substrates exhibit excellent material uniformity, which allows...

  • Dark-line observations in failed quantum well lasers. Waters, R. G.; Bertaska, R. K. // Applied Physics Letters;4/18/1988, Vol. 52 Issue 16, p1347 

    The electron-beam-induced current technique has been used to disclose dark-line patterns in degraded AlxGa1-xAs quantum well lasers. At least four distinct types of pattern exist, each being characteristic of a particular device structure.

  • High quality GaAs quantum well lasers grown on InP substrates by organometallic chemical vapor deposition. Chang-Hasnain, C. J.; Lo, Y. H.; Bhat, R.; Stoffel, N. G.; Lee, T. P. // Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p156 

    High quality GaAs quantum well lasers grown on (100) and 3°-off (100)InP substrates by organometallic chemical vapor deposition were investigated for the first time. 50-μm-wide broad-area gain-guided lasers were fabricated using preferential proton implantation. Low threshold densities,...

  • Temperature engineered growth of low-threshold quantum well lasers by metalorganic chemical vapor deposition. Dzurko, K. M.; Menu, E. P.; Beyler, C. A.; Osinski, J. S.; Dapkus, P. D. // Applied Physics Letters;1/9/1989, Vol. 54 Issue 2, p105 

    A new technique is demonstrated for the formation of narrow active regions in quantum well lasers. In temperature engineered growth (TEG), the substrate temperature is varied during the growth of epitaxial layers by metalorganic chemical vapor deposition (MOCVD) on nonplanar substrates, allowing...

  • Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Ludewig, P.; Knaub, N.; Hossain, N.; Reinhard, S.; Nattermann, L.; Marko, I. P.; Jin, S. R.; Hild, K.; Chatterjee, S.; Stolz, W.; Sweeney, S. J.; Volz, K. // Applied Physics Letters;6/17/2013, Vol. 102 Issue 24, p242115 

    The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy...

  • Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes. Kubota, Masashi; Okamoto, Kuniyoshi; Tanaka, Taketoshi; Ohta, Hiroaki // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p011920 

    Polarized photoluminescence (PL) spectra from nonpolar m-plane InGaN multiple quantum wells (MQWs) in blue laser diode wafers fabricated on m-plane GaN substrates were measured as a function of temperature. The polarization ratio (ρ) and the energy difference between the highest and the...

  • Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates. Xiao-Hang Li; Detchprohm, Theeradetch; Tsung-Ting Kao; Satter, Md. Mahbub; Shen, Shyh-Chiang; Yoder, P. Douglas; Dupuis, Russell D.; Wang, Shuo; Wei, Yong O.; Hongen Xie; Fischer, Alec M.; Ponce, Fernando A.; Wernicke, Tim; Reich, Christoph; Martens, Martin; Kneissl, Michael // Applied Physics Letters;10/6/2014, Vol. 105 Issue 14, p1 

    Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates. The epitaxial layers were grown pseudomorphically by metalorganic chemical vapor deposition on (0001) sapphire...

  • Self-electro-optic effect device and modulation convertor with InGaAs/InP multiple quantum wells. Bar-Joseph, I.; Sucha, G.; Miller, D. A. B.; Chemla, D. S.; Miller, B. I.; Koren, U. // Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p51 

    We report the first observation of the self-electro-optic effect in InGaAs/InP multiple quantum wells, grown by organometallic vapor phase epitaxy. Clear bistability and switching are observed over a range of 40 nm around 1.61 μm with 20–30 V bias. We demonstrate the operation of a...

  • High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor... Chang, J.R.; Su, Y.K.; Lin, C.L.; Wu, K.M.; Lu, Y.T.; Jaw, D.H.; Shiao, H.P.; Lin, W. // Applied Physics Letters;6/6/1999, Vol. 74 Issue 23, p3495 

    Reports that unstrained Al[sub 0.66]In[sub 0.34]As[sub 0.85]Sb[sub 0.15]/In[sub 0.53]Ga[sub 0.47]As multiple quantum well structures have been grown by metalorganic vapor phase epitaxy. Low-temperature photoluminescence performed for the multiple quantum well structures; Comparison of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics