Two-dimensional terahertz photonic crystals fabricated by deep reactive ion etching in Si

Jukam, Nathan; Sherwin, Mark S.
July 2003
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p21
Academic Journal
Two-dimensional terahertz photonic crystals were manufactured from Si using deep reactive ion etching. Arrays of square holes with widths of 80 (100) μm and lattice constants of 100 (125) μm were etched through 500-μm-thick wafers with high resistivity. Stop bands with transmittance <1% and widths >200 GHz were observed near 1 THz for light with an electric field vector in the plane of the wafers (TE polarization). The observed stop bands are close to TE photonic band gaps predicted by a two-dimensional calculation.


Related Articles

  • High quality factor AlN nanocavities embedded in a photonic crystal waveguide. Sam-Giao, D.; Néel, D.; Sergent, S.; Gayral, B.; Rashid, M. J.; Semond, F.; Duboz, J. Y.; Mexis, M.; Guillet, T.; Brimont, C.; David, S.; Checoury, X.; Boucaud, P. // Applied Physics Letters;5/7/2012, Vol. 100 Issue 19, p191104 

    We present a spectroscopic study of nanocavities obtained by small modifications of a W1 waveguide in an AlN photonic crystal membrane. The AlN film containing GaN quantum dots is grown on silicon. The photonic crystal structure is defined by e-beam lithography and etched by inductively coupled...

  • Electrical properties of contact etched p-Si: A comparison between magnetically enhanced and conventional reactive ion etching. Awadelkarim, O. O.; Mikulan, P. I.; Gu, T.; Reinhardt, K. A.; Chan, Y. D. // Journal of Applied Physics;8/15/1994, Vol. 76 Issue 4, p2270 

    Presents a study which detailed a comparative study on the damage induced in boron-doped silicon by contact etching. Comparison of approaches to the study; Description of the structure-chemistry combinations used; Damage examined in the silicon substrates of both structures; Techniques used in...

  • Deep level of iron-hydrogen complex in silicon. Sadoh, T.; Tsukamoto, K.; Baba, A.; Bai, D.; Kenjo, A.; Tsurushima, T.; Mori, H.; Nakashima, H. // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p3828 

    Investigates the deep levels related to iron in n-type silicon using thermally stimulated capacitance (TSCAP) combined with minority carrier injection. Two traps of Ev+0.31 and Ev+0.41 eV; Trend of energy positions for the complexes of transition metals and hydrogen; Interaction between 3rd...

  • Elimination of stacking faults in a silicon epitaxial layer of (100) orientation by heat treatment. Cai, Tianhai // Journal of Applied Physics;6/1/1990, Vol. 67 Issue 11, p7176 

    Presents a study which investigated the elimination of stacking faults in silicon epitaxial layer of orientation by heat treatment by observing repeated etching patterns. Origin of stacking faults in epitaxial layers; Method used in preparing the epitaxial layers; Overview of the repeated...

  • Silicon Structures with Dielectric Insulation Obtained by Vertical Anisotropic Etching. Guk, E. G.; Tkachenko, A. G.; Tokranova, N. A.; Granitsyna, L. S.; Astrova, E. V.; Podlaskin, B. G.; Nashchekin, A. V.; Shul�pina, I. L.; Rutkovskii, S. V. // Technical Physics Letters;May2001, Vol. 27 Issue 5, p381 

    Silicon structures with vertical insulating walls were prepared for multielement devices with high element packing density requiring deep pockets in silicon single crystals. The technology is based on the anisotropic etching of (110)-oriented silicon crystals and filling the etch grooves with an...

  • Role of nitrogen related complexes in the formation of defects in silicon. Karoui, A.; Karoui, F. Sahtout; Kvit, A.; Rozgonyi, G. A.; Yang, D. // Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2114 

    Defect size and density distributions were obtained as a function of depth in nitrogen doped CZ silicon (N-CZ) following Hi-Lo-Hi and Lo-Hi annealing, using an oxygen precipitate profiler. The defects were also delineated by Wright etching and Nomarski optical microscopy on both cleaved and...

  • Pulse-time-modulated electron cyclotron resonance plasma etching for highly selective, highly.... Samukawa, Seiji // Applied Physics Letters;6/20/1994, Vol. 64 Issue 25, p3398 

    Presents a highly selective, highly anisotropic, and notch-free etching for polycrystalline silicon achieved in pulse-time-modulated electron cyclotron resonance plasma etching. Improvement of the selectivity ratio of polycrystalline silicon etching rate; Control of the ion energy distributions...

  • Tunable Photonic Crystals Based on Electrochemically Etched Porous Silicon. Saplagio, Niel Gabriel E.; Mabilangan, Arvin I.; Faustino, Maria Angela B.; Lopez Jr., Lorenzo P.; Somintac, Armando S.; Salvador, Arnel A. // International Journal of Electrochemical Science;2014, Vol. 9 Issue 11, p6191 

    In this paper, porous silicon photonic crystals were simulated and fabricated as distributed Bragg reflectors (DBRs), graded DBRs and Fabry-Perot (FP) filters. The transfer matrix method (TMM) was used to model the propagation of light in the photonic crystal. The porous silicon photonic...

  • One-Dimensional Photonic Crystal Obtained by Vertical Anisotropic Etching of Silicon. Tolmachev, V.A.; Granitsyna, L.S.; Vlasova, E.N.; Volchek, B.Z.; Nashchekin, A.V.; Remenyuk, A.D.; Astrova, E.V. // Semiconductors;Aug2002, Vol. 36 Issue 8, p932 

    The potentialities of vertical anisotropic etching of (110) silicon for the fabrication of one-dimensional photonic crystal with a high refractive index contrast have been studied. It is shown that advances toward the near-IR spectral range are limited by the mechanical strength of thin silicon...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics