Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant

Kim, Kyoung-Kook; Kim, Hyun-Sik; Hwang, Dae-Kue; Lim, Jae-Hong; Park, Seong-Ju
July 2003
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p63
Academic Journal
A p-type ZnO was prepared on a sapphire substrate using P[SUB2]O[SUB5] as a phosphorus dopant. As-grown n-type ZnO films doped with phosphorus showed electron concentrations of 10[SUP16]- 10[SUP17]/cm[SUP3] and these films were converted to p-type ZnO by a thermal annealing process at a temperature above 800°C under a N[SUB2] ambient. The electrical properties of the p-type ZnO showed a hole concentration) of 1.0×10[SUP17]-1.7×10[SUP19]/cm[SUP3], a mobility of 0.53- 3.51 cm[SUP2]/V s, and a low resistivity of 0.59-4.4 Ω cm. The phosphorus-doped ZnO thin films showed a strong photoluminescence peak at 3.35 eV at 10 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO. This thermal activation process was very reproducible and effective in producing phosphorus-doped p-type ZnO thin films, and the produced p-type ZnO was very stable.


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