Controlling the native stacking fault density in II-VI/III-V heterostructures

Colli, A.; Pelucchi, E.; Franciosi, A.
July 2003
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p81
Academic Journal
We performed a systematic study of the native stacking fault density in ZnSe/GaAs(001) heterostructures implemented using several of the interface fabrication procedures proposed in the literature. Only two of the procedures examined reproducibly lead to stacking fault densities below 10[SUP4]cm[SUP-2]. Despite the apparent differences, the two procedures were found to yield quantitatively similar defect densities, and qualitatively similar interface compositions and band alignments.


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