Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition

Ryu, Y. R.; Lee, T. S.; White, H. W.
July 2003
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p87
Academic Journal
As-doped ZnO (ZnO:As) films have been characterized. ZnO:As films show p-type characteristics determined by Hall-effect and photoluminescence (PL) measurements. The hole concentration can be increased up to the mid-10[SUP17]-cm[SUP-3] range. The thermal binding energy of the As acceptor (E[SUPth-b],[SUBA] is 120±10 meV, as derived from temperature-dependent Hall-effect measurements. The PL spectra reveal two different acceptor levels (E[SUBopt-b],[SUBA]), located at 115 and 164 meV, respectively, above the maximum of the ZnO valence band, and also show the binding energy of the exciton to the As-acceptor (E[SUPb],[SUBAX]) is about 12 meV. The values of the ratio E[SUPb],[SUBAX]/(E[SUPth-b],[SUBA] or E[SUPopt-b],[SUBA]) are located in the range from 0.07 to 0.11.


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