TITLE

Dielectric properties of Pr[sub 2]O[sub 3] high-k films grown by metalorganic chemical vapor deposition on silicon

AUTHOR(S)
Lo Nigro, Raffaella; Raineri, Vito; Bongiorno, Corrado; Toro, Roberta; Malandrino, Graziella; Fragalà, Ignazio L.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p129
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Praseodymium oxide (Pr[SUB2]O[SUB3]) thin films have been deposited on Si(100) substrates by metalorganic chemical vapor deposition using praseodymium tris-2,2,6,6-tetramethyl-3,5-heptandionate as source material. Film structural, morphological, and compositional characterizations have been carried out. Dielectric properties have been studied as well by capacitance-voltage and current-voltage measurements on metal-oxide-semiconductor capacitors of several areas. The Pr[SUB2]O[SUB3] films have shown a dielectric constant ∊=23-25 and a leakage current density of 8.8×10[SUP-8] A/cm[SUP2] at 11 V.
ACCESSION #
10143739

 

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