Low-temperature growth of carbon nanotubes by plasma-enhanced chemical vapor deposition

Hofmann, S.; Ducati, C.; Robertson, J.; Kleinsorge, B.
July 2003
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p135
Academic Journal
Vertically aligned carbon nanotubes were grown at temperatures as low as 120°C by plasma-enhanced chemical vapor deposition. A systematic study of the temperature dependence of the growth rate and the structure of the as-grown nanotubes is presented using a C[SUB2]H[SUB2]/NH[SUB3] system and nickel as the catalyst. The activation energy for the growth rate was found to be 0.23 eV, much less than for thermal chemical vapor deposition (1.2-1.5 eV). This suggests growth occurs by surface diffusion of carbon on nickel. The result could allow direct growth of nanotubes onto low-temperature substrates like plastics, and facilitate the integration in sensitive nanoelectronic devices.


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