TITLE

Optical recombination of ZnO nanowires grown on sapphire and Si substrates

AUTHOR(S)
Zhao, Q. X.; Willander, M.; Morjan, R. E.; Hu, Q-H.; Campbell, E. E. B.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p165
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
ZnO nanowires have been grown on sapphire and Si substrates using catalytic growth. A strong near-band-gap ultraviolet emission is observed at room temperature. By carefully studying the temperature dependence of ZnO wire emission, we found that the room-temperature UV emission contains two different transitions; one is related to the ZnO free exciton and the other is related to the free-to-bound transition. The bound state has a binding energy of about 124 meV. The results from optical measurements show that a high quality of ZnO nanowires grown on sapphire and Si substrates has been achieved.
ACCESSION #
10143727

 

Related Articles

  • Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates. Zhang, X. Q.; Yao, Z. G.; Huang, S. H.; Suemune, Ikuo; Kumano, H. // Journal of Applied Physics;3/15/2006, Vol. 99 Issue 6, p063709 

    High-quality ZnO thin films have been grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates. Free-exciton absorption and exciton-LO phonon absorption peaks are observed in the films at room temperature, indicating that the exciton states are stable even at room temperature....

  • Determination of the epitaxial growth of zinc oxide nanowires on sapphire by grazing incidence synchrotron x-ray diffraction. Campos, L. C.; Dalal, S. H.; Baptista, D. L.; Magalhães-Paniago, R.; Ferlauto, A. S.; Milne, W. I.; Ladeira, L. O.; Lacerda, R. G. // Applied Physics Letters;4/30/2007, Vol. 90 Issue 18, p181929 

    This letter shows that aligned zinc oxide (ZnO) nanowires growth on sapphire substrates is epitaxial and demonstrates the crystallographic relation between the two using grazing incidence synchrotron x-ray diffraction (XRD). The in-plane lattice match between the sapphire and the nanowires was...

  • Effects of Moderate Amounts of Sulfur Substitutional Impurities on ZnO Using Density Functional Theory. Flores-Hidalgo, Manuel Alberto; Barraza-Jiménez, Diana; Glossman-Mitnk, Daniel // Open Nanoscience Journal;2011, Vol. 5, p1 

    A theoretical study on the effects of a moderate amount of sulfur when used as substituent impurity in place of oxygen in zinc oxide at its crystal form using Density Functional Theory (DFT). S-substituent amounts in percent go from 0.1% up to 1.0% and we analyze modifications in the crystal...

  • Realization of highly reproducible ZnO nanowire field effect transistors with n-channel depletion and enhancement modes. Hong, Woong-Ki; Hwang, Dae-Kue; Park, Il-Kyu; Jo, Gunho; Song, Sunghoon; Park, Seong-Ju; Lee, Takhee; Kim, Bong-Joong; Stach, Eric A. // Applied Physics Letters;6/11/2007, Vol. 90 Issue 24, p243103 

    The authors demonstrate the highly reproducible fabrication of n-channel depletion-mode (D-mode) and enhancement-mode (E-mode) field effect transistors (FETs) created from ZnO nanowires (NWs). ZnO NWs were grown by the vapor transport method on two different types of substrates. It was...

  • Growth habits and defects in ZnO nanowires grown on GaN/sapphire substrates. Levin, Igor; Davydov, Albert; Nikoobakht, Babak; Sanford, Norman; Mogilevsky, Pavel // Applied Physics Letters;9/5/2005, Vol. 87 Issue 10, p103110 

    Growth habits and defects in epitaxial ZnO nanowires grown from Au catalyst on (00.1) GaN/sapphire substrate using the vapor-liquid-solid (VLS) technique were studied using electron microscopy and x-ray diffraction. The results revealed presence of both horizontal (crawling-like) and vertical...

  • Enhancement of exciton binding energies in ZnO/ZnMgO multiquantum wells. Sun, H. D.; Makino, T.; Segawa, Y.; Kawasaki, M.; Ohtomo, A.; Tamura, K.; Koinuma, H. // Journal of Applied Physics;2/15/2002, Vol. 91 Issue 4, p1993 

    The effect of confinement on the exciton binding energies has been systematically investigated for two series of ZnO/ZnMgO multiquantum wells with various well widths and barrier heights. The exciton binding energies were extracted from the energy difference between the stimulated emission band...

  • Large-quantity free-standing ZnO nanowires. Banerjee, D.; Lao, J.Y.; Wang, D.Z.; Huang, J.Y.; Ren, Z.F.; Steeves, D.; Kimball, B.; Sennett, M. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2061 

    Large-quantity (grams) one-dimensional ZnO nanowires of different sizes have been synthesized by a simple thermal evaporation of ZnO powder in a tube furnace at a temperature controlled to 1000–1200 °C and pressure to 1–2 Torr air. A mixture of ZnO and graphite powder was used...

  • Zinc oxide nanowires on carbon nanotubes. Kim, Hansoo; Sigmund, Wolfgang // Applied Physics Letters;9/9/2002, Vol. 81 Issue 11, p2085 

    Multiwalled nanotubes (MWNTs) were heat-treated with zinc (Zn) at various temperatures. Hereby, zinc oxide (ZnO) was produced on the outermost shells of MWNTs in the forms of ultrathin films, quantum dots, or nanowires/nanorods. ZnO nanowires were grown on the surface of MWNTs without the...

  • Formation of Zinc Oxide Quasibicrystal Structures. Ataev, B. M.; Bagamadova, A. M.; Mamedov, V. V.; Makhmudov, S. Sh.; Omaev, A. K. // Crystallography Reports;Nov2002, Vol. 47 Issue 6, p1049 

    Quasibicrystal structures with interblock boundaries of epitaxial zinc oxide layers on a sapphire substrate along a given direction have been obtained for producing submicron electronic devices. It is shown that the use of the buffer technique allows one to grow on one (10&1macr;2) α-Al[sub...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics