TITLE

Electrical and optical proprieties of photodiodes based on ZnSe material

AUTHOR(S)
Bouhdada, A.; Hanzaz, M.; Vigué, F.; Faurie, J. P.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p171
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Based on the spectral response and I - V measurements, the physical mechanism responsible for electrical conduction and optical response have been suggested. The Schottky diode response remains quite flat for energies above the gap, an advantage in comparison with the p - i - n photodiode. The obtained result showed a high leakage resistance for Schottky photodiode explained by the presence of the defect at the metal/semiconductor interface.
ACCESSION #
10143724

 

Related Articles

  • Spectral responsivity and quantum efficiency of n-ZnO/p-Si photodiode fully isolated by ion-beam treatment. Park, C. H.; Jeong, I. S.; Kim, J. H.; Im, Seongil // Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3973 

    We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted Si[sup +] ions into the n-ZnO layer. We have obtained a wide-range...

  • Low noise p-pi-n GaN ultraviolet photodetectors. Osinsky, A.; Gangopadhyay, S. // Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2334 

    Examines the fabrication and characterization of p-pi-n gallium nitride ultraviolet detectors. Measurement of the spectral response of photodiodes; Analysis on the strong peaking of spectral response with front illumination; Identification of the noise characteristics of photodiodes.

  • Fast-response p- i- n photodiodes for 0.9–2.4 μm wavelength range. Andreev, I.; Serebrennikova, O.; Sokolovskii, G.; Kunitsyna, E.; Dyudelev, V.; Gadzhiev, I.; Deryagin, A.; Grebenshchikova, E.; Konovalov, G.; Mikhailova, M.; Il'inskaya, N.; Kuchinskii, V.; Yakovlev, Yu. // Technical Physics Letters;May2010, Vol. 36 Issue 5, p412 

    Fast-response, uncooled p- i- n photodiodes with a long-wavelength spectral sensitivity boundary at λ = 2.4 μm have been created on the basis of GaSb/GaInAsSb/GaAlAsSb heterostructures. A low doping level (1014–1015 cm−3) in the active layer ensured a low capacitance of the...

  • Uncooled photodetectors for the 3–5 μm spectral range based on III–V heterojunctions. Krier, A.; Suleiman, W. // Applied Physics Letters;8/21/2006, Vol. 89 Issue 8, p083512 

    The design, fabrication, and characterization of heterojunction photodiodes for room temperature operation in the mid-infrared (3–5 μm) spectral range is described. Devices appropriate for carbon dioxide detection have been developed and studied. The authors report on the improvements...

  • Organic-based tristimuli colorimeter. Antognazza, M. R.; Scherf, U.; Monti, P.; Lanzani, G. // Applied Physics Letters;4/16/2007, Vol. 90 Issue 16, p163509 

    The authors realize three photodiodes based on organic materials, which have photoresponse curves matched to the colorimetric functions of the standard observer. Such a system of detectors is used for realizing a three-stimuli colorimeter. They report the result of measurements in different...

  • Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiodes. Um, Han-Don; Moiz, Syed Abdul; Park, Kwang-Tae; Jung, Jin-Young; Jee, Sang-Won; Ahn, Cheol Hyoun; Kim, Dong Chan; Cho, Hyung Koun; Kim, Dong-Wook; Lee, Jung-Ho // Applied Physics Letters;1/17/2011, Vol. 98 Issue 3, p033102 

    A radial heterojunction nanowire diode (RND) array consisting of a ZnO (shell)/Si (core) structure was fabricated using conformal coating of a n-type ZnO layer that surrounded a p-type Si nanowire. In both ultraviolet (UV) and visible ranges, the photoresponsivity of the RND was larger than that...

  • Optical Alignment of Cu[sup 2+] Axial Centers in KTaO[sub 3]: Spectral Dependence of the Effect. Basun, S. A.; Razdobarin, A. G.; Sochava, L. S.; Evans, D. R.; Skrebtsov, G. // Physics of the Solid State;Feb2004, Vol. 46 Issue 2, p258 

    The Cu[sup 2+][sub Ta]–V[sub O] axial centers in crystalline KTaO[sub 3] were found to undergo alignment under the action of polarized light. The sign of the effect is shown to change depending on the wavelength of the aligning light. A parallel study of the spectral response of...

  • Evolution process of luminescent Si nanostructures in annealed SiOx thin films probed by photoconductivity measurements. Koyanagi, Emi; Uchino, Takashi // Applied Physics Letters;7/23/2007, Vol. 91 Issue 4, p041910 

    The authors have investigated the photoconductivity (PC) phenomena of SiOx thin films during annealing, which eventually lead to the formation of luminescent Si nanostructures. It has been found that there are three characteristic annealing stages in the variation of the PC spectral response...

  • HgCdTe Quantum Detection: from Long-Wave IR down to UV. Gravrand, O.; Rothman, J. // Journal of Electronic Materials;Aug2011, Vol. 40 Issue 8, p1781 

    few years ago, visible detection was demonstrated using advanced substrate thinning processes on flip-chip hybridized HgCdTe focal-plane arrays, in both French and US laboratories. Constant quantum efficiency was demonstrated at LETI-Sofradir from the short-wave infrared (IR) (2.5 μm cut-off)...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics