GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Ye, P. D.; Wilk, G. D.; Yang, B.; Kwo, J.; Chu, S. N. G.; Nakahara, S.; Gossmann, H.-J. L.; Mannaerts, J. P.; Hong, M.; Ng, K. K.; Bude, J.
July 2003
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p180
Academic Journal
A GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with thin Al[SUB2]O[SUB3] gate dielectric in nanometer (nm) range grown by atomic layer deposition is demonstrated. The nm-thin oxide layer with significant gate leakage current suppression is one of the key factors in downsizing field-effect transistors. A 1 μm gate-length depletion-mode n-channel GaAs MOSFET with an Al[SUB2]O[SUB3] gate oxide thickness of 8 nm, an equivalent SiO[SUB2] thickness of ∼3 nm, shows a broad maximum transconductance of 120 mS/mm and a drain current of more than 400 mA/mm. The device shows a good linearity, low gate leakage current, and negligible hysteresis in drain current in a wide range of bias voltage.


Related Articles

  • A semicentury of semiconductors. Fowler, Alan B. // Physics Today;Oct93, Vol. 46 Issue 10, p59 

    Traces the development of the field of semiconductor physics. Invention of the bipolar transistor in 1947; Development of the gallium arsenide technology; Metal oxide semiconductor field-effect transistors (MOSFET); Heterostructures.

  • Lucent team details GaAs MOSFET success. Bradley, Gale // Electronic News;12/16/96, Vol. 42 Issue 2147, p60 

    Reports on the paper presentation made by Lucent Technologies researchers during the International Electron Devices Meeting (IEDM) detailing their success in creating gallium arsenide metal oxide semiconductor field effect transistors (GaAs MOSFETs). Comments from research team leaders ...

  • Laser selective area epitaxy of GaAs metal-semiconductor-field-effect transistor. Liu, H.; Roberts, J.C.; Ramdani, J.; Bedair, S.M. // Applied Physics Letters;4/15/1991, Vol. 58 Issue 15, p1659 

    Studies the laser selective area epitaxy of gallium arsenide metal-semiconductor-field-effect transistors. Doping calibrations; Current-voltage characteristic of gate Shottky contact; Linear increase in carrier concentration with silane flow rate.

  • Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric. Lin, H. C.; Yang, T.; Sharifi, H.; Kim, S. K.; Xuan, Y.; Shen, T.; Mohammadi, S.; Ye, P. D. // Applied Physics Letters;11/19/2007, Vol. 91 Issue 21, p212101 

    Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211 and 263 mA/mm are obtained for 1 μm gate-length Al2O3 MOS-HEMTs with 3 and 6 nm thick gate...

  • Fabrication of gate stack with high gate work function for implantless enhancement-mode GaAs n-channel metal-oxide-semiconductor field effect transistor applications. Ming Zhu; Hock-Chun Chin; Samudra, Ganesh S.; Yee-Chia Yeo // Applied Physics Letters;3/24/2008, Vol. 92 Issue 12, p123513 

    The guidelines for the selection of gate stacks in using an implantless enhancement-mode GaAs n-channel metal-oxide-semiconductor field effect transistor, which is based on a gate material with high work function, are studied using two dimensional device simulation. By employing the silane...

  • Evidence for an isotope effect in the electrical transport of thermally generated mobile charges in amorphous SiO[sub 2]. Devine, R. A. B.; Devine, R.A.B. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    The thermal generation of mobile, positively charged species in the gate oxide of metal-oxide-semiconductor field effect transistors has been studied. Static hysteresis in the source-drain current versus gate voltage curves indicates the presence of ∼3.2x10[sup 12] cm[sup -2] mobile charges...

  • Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer. Hyoung-Sub Kim; Ok, Injo; Manhong Zhang; Lee, T.; Zhu, F.; Yu, L.; Lee, Jack C.; Koveshnikov, S.; Tsai, W.; Tokranov, V.; Yakimov, M.; Oktyabrsky, S. // Applied Physics Letters;11/27/2006, Vol. 89 Issue 22, p222904 

    The authors present depletion-mode n-channel GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with a TaN gate electrode, a thin HfO2 gate dielectric, and a thin germanium (Ge) interfacial passivation layer (IPL). Depletion-mode MOSFET on the molecular-beam epitaxy-grown n-type...

  • The 2d MIT for Heterostructures and MOSFETs: Interactions. Castner, T. G. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p553 

    Interactions, the crucial feature of the 2d Metal-Insulator Transition, originate from exchange and Coulonb interactions between carriers, and between charged traps and the carriers. These introduce a large pseudogap in the density-of-states producing a large, positive correction to the Fermi...

  • Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide. Zhu, F.; Koveshnikov, S.; Ok, I.; Kim, H. S.; Zhang, M.; Lee, T.; Thareja, G.; Yu, L.; Lee, J. C.; Tsai, W.; Tokranov, V.; Yakimov, M.; Oktyabrsky, S. // Applied Physics Letters;7/23/2007, Vol. 91 Issue 4, p043507 

    The authors have demonstrated a n-type GaAs depletion-mode metal-oxide-semiconductor field-effect Transistor with normalized transconductance gm of 266 mS/mm, peak electron mobility of 1124 cm2 V-1 s-1, and low hysteresis. The good device characteristics are attributed to the use of amorphous...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics