TITLE

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

AUTHOR(S)
Ye, P. D.; Wilk, G. D.; Yang, B.; Kwo, J.; Chu, S. N. G.; Nakahara, S.; Gossmann, H.-J. L.; Mannaerts, J. P.; Hong, M.; Ng, K. K.; Bude, J.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p180
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with thin Al[SUB2]O[SUB3] gate dielectric in nanometer (nm) range grown by atomic layer deposition is demonstrated. The nm-thin oxide layer with significant gate leakage current suppression is one of the key factors in downsizing field-effect transistors. A 1 μm gate-length depletion-mode n-channel GaAs MOSFET with an Al[SUB2]O[SUB3] gate oxide thickness of 8 nm, an equivalent SiO[SUB2] thickness of ∼3 nm, shows a broad maximum transconductance of 120 mS/mm and a drain current of more than 400 mA/mm. The device shows a good linearity, low gate leakage current, and negligible hysteresis in drain current in a wide range of bias voltage.
ACCESSION #
10143721

 

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