Attachment of DNA probes on gallium arsenide surface

Mohaddes-Ardabili, Ladan; Martınez-Miranda, Luz J.; Silverman, Joseph; Christou, Aristos; Salamanca-Riba, Lourdes G.; Al-Sheikhly, Mohamad; Bentley, William E.; Ohuchi, F.
July 2003
Applied Physics Letters;7/7/2003, Vol. 83 Issue 1, p192
Academic Journal
Chemical attachment of the thiol-derivatized DNA monolayers on arsenic terminated GaAs (001) has been achieved. The sulfur-As-based covalent bonds of the thiolated oligonucleotids on the arsenic terminated GaAs (001) were observed using x-ray photoelectron spectroscopy. The purpose of our work is to investigate the self-assembly of thiol-derivatized single-stranded DNA oligonucleotides (probes) on GaAs substrate. In this letter, we demonstrate that both the S-H group in the thiolated single-strand DNA, and the N-H group in the DNA bases are functional groups that can be utilized to anchor the DNA molecule, or other biological molecules on the As-terminated GaAs surface.


Related Articles

  • Damage profile of ion-implanted GaAs by x-ray photoelectron spectroscopy. Lu, Z. H.; Azelmad, A.; Trudeau, Y.; Yelon, A. // Applied Physics Letters;8/28/1989, Vol. 55 Issue 9, p846 

    We report on the use of x-ray photoelectron spectroscopy for the investigation of radiation damage in GaAs. The technique has been used to profile the damage induced by 7 MeV Si+ ions. Arsenic displaced by the ions is found in an interstitial elementary state. Using chemical etching, we are able...

  • Electrical properties in arsenic-ion-implanted GaAs. Chen, Wen-Chung; Chang, C.-S. // Journal of Applied Physics;8/1/1996, Vol. 80 Issue 3, p1600 

    Discusses a study that examined the electrical properties in arsenic-ion-implanted gallium arsenide. Use of x-ray photoelectron spectroscopy to investigate a series of band diagrams of arsenic-ion-implanted films; Experimental details; Conclusion of the study.

  • In situ x-ray photoelectron spectroscopic study of GaAs grown by atomic layer epitaxy. Kodama, K.; Ozeki, M.; Mochizuki, K.; Ohtsuka, N. // Applied Physics Letters;2/13/1989, Vol. 54 Issue 7, p656 

    We carried out an in situ investigation of GaAs grown by atomic layer epitaxy, using an x-ray photoelectron spectroscopy system combined with a metalorganic vapor phase epitaxial growth chamber, where Ga(CH3)3 and AsH3 were the source gases. It has been proved that Ga(CH3)n molecules (where n=1...

  • X-ray photoelectron spectroscopy study of the effects of ultrapure water on GaAs. Massies, J.; Contour, J. P. // Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1150 

    X-ray photoelectron spectroscopy has been used to investigate the effects of de-ionized water on chemical etched GaAs surfaces. When the treatment with water is performed in static conditions (stagnant water) a Ga-rich oxide layer is formed on GaAs at the rate of 10–20 Å h-1. In...

  • The temperature dependence of the Cl2/GaAs(110) surface product distribution. Simpson, W. C.; Tong, W. M.; Weare, C. B.; Shuh, D. K.; Yarmoff, J. A. // Journal of Chemical Physics;1/1/1996, Vol. 104 Issue 1, p320 

    The reaction of Cl2 with GaAs(110) is studied with soft x-ray photoelectron spectroscopy (SXPS). The temperature dependence of the surface product distribution, in the range of 300–650 K, is derived from SXPS core-level and valence-band spectra and compared to known gas-phase product...

  • Electrochemical passivation of gallium arsenide surface with organic self-assembled monolayers in aqueous electrolytes. Adlkofer, Klaus; Tanaka, Motomu; Hillebrandt, Heiko; Wiegand, Gerald; Sackmann, Erich; Bolom, Tibor; Deutschmann, Rainer; Abstreiter, Gerhard // Applied Physics Letters;5/29/2000, Vol. 76 Issue 22 

    Self-assembled monolayers of octadecylthiol (ODT) were reconstituted on freshly etched gallium arsenide (n-GaAs) for the electrochemical stabilization against decomposition of the surfaces (passivation) in aqueous buffers. The surface composition was evaluated by x-ray photoelectron spectroscopy...

  • Effect of hydrogen on the chemical bonding and band structure at the Al2O3/In0.53Ga0.47As interface. Shekhter, Pini; Kornblum, Lior; Liu, Zuoguang; Cui, Sharon; Ma, T. P.; Eizenberg, Moshe // Applied Physics Letters;12/5/2011, Vol. 99 Issue 23, p232103 

    Surface passivation of high mobility semiconductors such as InGaAs is a crucial bottleneck towards their integration in metal-oxide-semiconductor devices. The chemical structure and band offsets of InGaAs-Al2O3 with different passivations were investigated by x-ray photoelectron spectroscopy....

  • Low-Temperature III-V Direct Wafer Bonding Surface Preparation Using a UV-Sulfur Process. Jackson, Michael; Chen, Li-Min; Kumar, Ankit; Yang, Yang; Goorsky, Mark // Journal of Electronic Materials;Jan2011, Vol. 40 Issue 1, p1 

    technique for direct wafer bonding of III-V materials utilizing a dry sulfur passivation method is presented. Large-area bonding occurs for GaAs/GaAs and InP/InP at room temperature. Bulk fracture strength is achieved after annealing GaAs/GaAs at 400°C and InP/InP at 300°C for times less...

  • Deposition of CaF2 and GaF3 on sulfur passivated GaAs(111)A, 100, and (111)B surfaces. Scimeca, T.; Muramatsu, Y.; Oshima, M.; Oigawa, H.; Nannichi, Y.; Ohno, T. // Journal of Applied Physics;5/1/1992, Vol. 71 Issue 9, p4405 

    Presents a study which investigated the interfacial chemical bonding for GaF[sub3] and CaF[sub2] deposited on S passivated gallium arsenide (111)A, 100, and (111)B surfaces. Experimental details; Results and discussion; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics