Thermoelastic stress in GaAs/AlGaAs quantum cascade lasers

Spagnolo, Vincenzo; Scamarcio, Gaetano; Marano, Danilo; Page, Hideaki; Sirtori, Carlo
June 2003
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4639
Academic Journal
We have determined the shear stress associated with the temperature gradient in quantum cascade lasers operated in continuous-wave mode. This information was obtained as a function of the electrical power using a combination of microprobe photoluminescence and anti-Stokes/Stokes Raman measurements in ridge-waveguide GaAs structures mounted epilayer down to the heat sink. At electrical power densities in the order of ∼5 kW/cm(2), the strain in the cladding layers at the edges of the laser ridges reaches the critical value for the creation of misfit dislocations. Above 10-12 kW/cm(2), extended defect formation and eventual device failure are observed.


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