TITLE

Transition between two states of surface coverage and etch rate during Si etching in inductively coupled Cl[sub 2]–Ar plasmas with changing mixtures

AUTHOR(S)
Fuller, N. C. M.; Telesca, Donald A.; Donnelly, Vincent M.; Herman, Irving P.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4663
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The etch rate and surface Sic and Sic[SUB2] concentrations abruptly increase and the surface Si concentration abruptly decreases as the chlorine fraction is increased above a threshold value during Si etching by an inductively coupled Cal[sub2]-Are mixture plasma. The surface species are detected by) laser desorption of the chlorinated adlayer using laser-induced fluorescence and plasma-induced emission of the desorbed species. This threshold chlorine fraction is 75% for 80 eV average ion energy, and increases with the average energy of ions incident on the surface. This unexpected observation is attributed to a phase transition between two states of surface chlorination and morphology.
ACCESSION #
10106520

 

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