TITLE

Effect of N incorporation on boron penetration from p[sup +] polycrystalline-Si through HfSixOy films

AUTHOR(S)
Quevedo-Lopez, M. A.; El-Bouanani, M.; Kim, M. J.; Gnade, B. E.; Wallace, R. M.; Visokay, M. R.; LiFatou, A.; Chambers, J. J.; Colombo, L.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4669
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate that incorporating N in Hf-silicate films reduces B penetration through the dielectric film. By modeling the B depth profiles, we calculated the B diffusivities through Hf-silicate HfSi[sub]O[sub] to be ∼23 higher than the corresponding diffusivities for Hf-silicon ox nitride HfSi[sub]O[sub]N[subs]. B diffusion through grain boundaries after HfSi[sub]O[sub] crystallization is believed to be responsible for the enhanced B diffusivity observed. Suppression of crystallization observed in HfSi[subx]O[sub]N[subz] films is attributed to the lower Hf content in the films and the incorporation of N. The decreased B penetration observed in HfSi[subx]O[suby]N[subz] is a combination of absence of grain)boundaries and the fact that N blocks B diffusion by occluding diffusion pathways. The minimum temperatures for B penetration are estimated to be approximately 950 and 1050 °C for HfSi[subx]O[suby] and HfSi[subx]O[suby]N[subz], respectively.
ACCESSION #
10106518

 

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