Influence of growth conditions on the lattice constant and composition of (Ga,Mn)As

Schott, G. M.; Schmidt, G.; Karczewski, G.; Molenkamp, L. W.; Jakiela, R.; Barcz, A.
June 2003
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4678
Academic Journal
The lattice constant and the alloy composition of (Ga,Mn)As are investigated by high-resolution x-ray diffraction and secondary ion mass spectroscopy. The (Ga,Mn)As layers are grown by low-temperature molecular-beam epitaxy under various growth conditions. We find that, while the alloy composition is mainly determined by the Mn cell temperature (TMn), the substrate temperature) (Tsub) and the arsenic to gallium flux ratio (As/Ga) strongly influence the lattice constant. In particular, layers which have the same composition but different growth parameters have quite different lattice constants, caused by the amount of excess As incorporation in the (Ga,Mn) As crystal. This implies that the lattice parameter of (Ga,Mn)As cannot even serve as a rough measure of the crystal composition. (Ga,Mn)As is therefore an example of a system which does not obey Vegard's law.


Related Articles

  • Doping and residual impurities in GaAs layers grown by close-spaced vapor transport. Le Bel, C.; Cossement, D.; Dodelet, J. P.; Leonelli, R.; DePuydt, Y.; Bertrand, P. // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1288 

    Presents information on a study which used the close-spaced vapor transport technique to grow gallium arsenic epitaxial layers. Experimental proecures; Results; Discussion.

  • Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions. Pawlak, B. J.; Surdeanu, R.; Colombeau, B.; Smith, A. J.; Cowern, N. E. B.; Lindsay, R.; Vandervorst, W.; Brijs, B.; Richard, O.; Cristiano, F. // Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2055 

    We investigate the thermal stability of boron-doped junctions formed by Ge preamorphization and solid phase epitaxial regrowth. Isochronal annealing and characterization by sheet resistance, secondary-ion mass spectrometry, and spreading-resistance measurement are used to extract detailed...

  • Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy. Radulescu, D. C.; Wicks, G. W.; Schaff, W. J.; Calawa, A. R.; Eastman, L. F. // Journal of Applied Physics;5/15/1988, Vol. 63 Issue 10, p5115 

    Provides information on a study concerning the effect of substrate misorientation on the incorporation of gallium and arsenic heterostructure. Observation on the relation between the heterostructure and molecular-beam epitaxy; Discussion of the electron transport properties of the structure;...

  • Interband transitions in molecular-beam-epitaxial AlxGa1-xAs/GaAs. Aubel, J. L.; Reddy, U. K.; Sundaram, S.; Beard, W. T.; Comas, James // Journal of Applied Physics;7/1/1985, Vol. 58 Issue 1, p495 

    Examines the interband transition energies in aluminum[subx]gallium[sub1]_[subx]arsenic layers grown by molecular-beam epitaxy techniques. Experimental details; Results of the study; Discussion of findings.

  • Photoccurent study of molecular beam epitaxy GaAx grown at low temperature. Hozhabri, N.; Montoya, J. C. // Journal of Applied Physics;3/1/2000, Vol. 87 Issue 5, p2353 

    Provides information on a study which proposed models for the high resistivity of annealed low temperature-gallium arsenide. Samples used in the experiment; Results and discussion.

  • Raman scattering in In1-xGaxAsyP1-y quaternary alloys. Soni, R. K.; Abbi, S. C.; Jain, K. P.; Balkanski, M.; Slempkes, S.; Benchimol, J. L. // Journal of Applied Physics;3/15/1986, Vol. 59 Issue 6, p2184 

    Presents the results of Raman scattering in quaternary indium [sub1-x] gallium[subx]arsenic[suby] phosphorus[1-y] alloys. Experimental procedure and results; Discussion; Conclusion.

  • Polarity selective etching: A self-assisted route for fabricating high density of c-axis oriented tapered GaN nanopillars. Ghosh, A.; Bhasker, H. P.; Mukherjee, A.; Kundu, T.; Singh, B. P.; Dhar, S.; De, S.; Chowdhury, A. // Journal of Applied Physics;Aug2011, Vol. 110 Issue 3, p033528 

    High density of c-axis oriented tapered GaN nanopillars are fabricated simply by exposing GaN epitaxial layers in argon-chlorine plasma without any prior lithographic processing. The nature and the formation process of the pillars are investigated by different optical and structural...

  • Photoconductivity decay in metamorphic InAsP/InGaAs double heterostructures grown on InAsyP1-y compositionally step-graded buffers. Lin, Y.; Hudait, M. K.; Johnston, S. W.; Ahrenkiel, R. K.; Ringel, S. A. // Applied Physics Letters;2/14/2005, Vol. 86 Issue 7, p071908 

    Lattice-mismatched InAs0.32P0.68/In0.68Ga0.32As/InAs0.32P0.68 double heterostructures (DH) were grown on compositionally graded InAsyP1-y/InP substrates by solid-source molecular-beam epitaxy (MBE) out to a misfit of ∼1%. The kinetics of carrier recombination were investigated in the nearly...

  • Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN. Koblmüller, G.; Brown, J.; Averbeck, R.; Riechert, H.; Pongratz, P.; Speck, J. S. // Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p041908 

    We present a study of the evolution of the Ga adlayer during plasma-assisted molecular-beam epitaxy of (0001) GaN as a function of both Ga flux and growth temperature. In situ quadrupole mass spectrometry was used to quantitatively determine the adsorbed Ga coverage by monitoring its subsequent...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics