Real-time in situ x-ray diffraction as a method to control epitaxial growth

Bader, A. S.; Faschinger, W.; Schumacher, C.; Geurts, J.; Molenkamp, L. W.; Neder, R. B.; Karczewski, G.
June 2003
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4684
Academic Journal
We developed a real-time in situ x-ray Bragg diffraction technique for monitoring epitaxial growth. In our setup, the x-ray diffraction requirement of an extremely exact sample adjustment and an angular scan of sample and detector are circumvented by using a slightly divergent x-ray beam and observing an extremely asymmetric Bragg reflection with a multichannel detector. The angular range covered by the stationary multichannel detector corresponds nearly exactly to the q[SUBz] interval of a conventional ω2 θ scan. The technique is demonstrated by monitoring the molecular-beam epitaxial growth of a ZnSe epilayer on (001)GaAs. The exposure time of each diffraction pattern is only a few seconds, which enables a real-time x-ray diffraction monitoring of the epitaxial growth process.


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