TITLE

Structural and electrical characteristics of Ge nanoclusters embedded in Al[sub 2]O[sub 3] gate dielectric

AUTHOR(S)
Wan, Q.; Lin, C. L.; Liu, W. L.; Wang, T. H.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4708
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Structural and electrical characteristics of the metal-insulator-semiconductor (MIS) structures of Al/Al[SUB2]O[SUB3]/Si containing Ge nanoclusters are experimentally demonstrated. Secondary ion mass spectroscopy results indicate the out-diffusion of Ge after annealing at 800 °C in N[SUB2] ambient for 30 min. An increment of leakage current is observed due to the out-diffusion of Ge. Capacitance-voltage studies indicate that annealing can effectively passivate the negatively charged trapping centers. Memory effect of the Ge nanoclusters is verified by the hysteresis in the C - V curves in the annealed sample.
ACCESSION #
10106502

 

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