IrO[sub 2] Schottky contact on n-type 4H-SiC

Han, Sang Youn; Jang, Ho Won; Lee, Jong-Lam
June 2003
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4726
Academic Journal
A thermally stable IrO[SUB2] Schottky contact on n-type 4H-SiC was achieved by annealing an Ir contact under O[SUB2] ambient. The IrO[SUB2] contact exhibited a high Schottky barrier height of 2.22 eV and low reverse leakage current. Little degradation in Schottky barrier height was observed even after annealing at 450 °C for 24 h under atmospheric air. The oxidation annealing transformed the Ir layer into IrO[SUB2], resulting in the increase in the work function of the contact layer. Simultaneously, Si-atoms diffused out, leaving the Si vacancy below the contact. These played a role in forming a thermally stable Schottky contact with a high Schottky barrier height.


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