TITLE

IrO[sub 2] Schottky contact on n-type 4H-SiC

AUTHOR(S)
Han, Sang Youn; Jang, Ho Won; Lee, Jong-Lam
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4726
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A thermally stable IrO[SUB2] Schottky contact on n-type 4H-SiC was achieved by annealing an Ir contact under O[SUB2] ambient. The IrO[SUB2] contact exhibited a high Schottky barrier height of 2.22 eV and low reverse leakage current. Little degradation in Schottky barrier height was observed even after annealing at 450 °C for 24 h under atmospheric air. The oxidation annealing transformed the Ir layer into IrO[SUB2], resulting in the increase in the work function of the contact layer. Simultaneously, Si-atoms diffused out, leaving the Si vacancy below the contact. These played a role in forming a thermally stable Schottky contact with a high Schottky barrier height.
ACCESSION #
10106492

 

Related Articles

  • In-depth profiling of sputter-induced space-charge compensation in p-silicon Schottky barriers. Hellings, G. J. A.; Straayer, A.; Kipperman, A. H. M. // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p2067 

    Presents an in-depth profiling of sputter-induced space-charge compensation in p-silicon Schottky barriers. Division of the induced sputter effects; Deposition of the metal onto boron-doped p-type silicon; Thickness of the reacted silicon for different oxidation voltages.

  • Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier. Calcagno, L.; Ruggiero, A.; Roccaforte, F.; La Via, F. // Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p023713 

    The electrical characteristics of nickel-silicide Schottky contacts on silicon carbide have been measured by using current-voltage technique in the temperature range of 120–700 K. Thermal annealing at 873 K formed the nickel silicide. The electrical behavior of the contact showed a...

  • Study of the relaxation of the excess current in silicon Schottky diodes. Pashaev, I. // Semiconductors;Oct2014, Vol. 48 Issue 10, p1391 

    This study is devoted to investigation of the relaxation of excess current in silicon α-NiTi- n-Si Schottky diodes subjected to either γ-ray radiation or local disturbance of the interface structure using a diamond indenter. A decrease in the excess diode current is attained using both...

  • Al/Si(100) Schottky barrier formation using nozzle jet beam deposition. Wong, J.; Mei, S-N.; Lu, T-M. // Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p679 

    High Schottky barrier height of [lowercase_phi_synonym]b=0.77 eV for Al/n-Si was obtained by the nozzle jet beam deposition method in a conventional vacuum condition without post-annealing. Previously, this high barrier height was only observable in the vacuum cleaved or sputter-etched samples...

  • Schottky barrier instabilities due to contamination. Newman, N.; Liliental-Weber, Z.; Weber, E. R.; Washburn, J.; Spicer, W. E. // Applied Physics Letters;7/11/1988, Vol. 53 Issue 2, p145 

    We reported here a systematic study of the annealing-induced changes in the barrier height of Schottky barrier diodes fabricated on atomically clean and contaminated surfaces. Al, Ag, Au, and Cr/GaAs(110) diodes were fabricated by in situ deposition on clean n-type GaAs(110) surfaces prepared by...

  • Thermally stable PtSi Schottky contact on n-GaN. Liu, Q.Z.; Yu, L.S. // Applied Physics Letters;3/10/1997, Vol. 70 Issue 10, p1275 

    Investigates and compares platinum silicide (PtSi) and platinum Schottky contacts on n-GaN. Formation of PtSi contacts on n-GaN; Description of the barrier height of the as-formed PtSi contacts following annealing; Indication of the electrical measurements and the Rutherford backscattering...

  • Thermally stable rhenium Schottky contacts to n-GaN. Venugopalan, H. S.; Mohney, S. E. // Applied Physics Letters;8/31/1998, Vol. 73 Issue 9 

    The barrier heights of Re Schottky contacts to n-GaN were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements. Both techniques indicate that the barrier height increases upon annealing at 500 °C for 10 min. After this anneal, a barrier...

  • Polymorphous hydrogenated silicon Schottky diodes: Properties under illumination. Gauthier, Monique // Journal of Applied Physics;2/15/2002, Vol. 91 Issue 4, p2423 

    This report describes the properties of thick Schottky diodes based on standard device grade amorphous hydrogenated silicon or polymorphous hydrogenated silicon under illumination. It has been observed that the internal collection efficiency in the red part of the spectrum is much higher for the...

  • Temperature dependence of Schottky barrier heights on silicon. Werner, Jürgen H.; Güttler, Herbert H. // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1315 

    Presents information on a study which investigated the temperature dependence of Schottky barrier heights on silicon. Experimental procedures; Measurement of temperature coefficients; Discussion of the results.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics