TITLE

Theory of semiconductor magnetic bipolar transistors

AUTHOR(S)
Flatté, M. E.; Yu, Z. G.; Johnston-Halperin, E.; Awschalom, D. D.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4740
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Bipolar transistors with a ferromagnetic base are shown theoretically to have the potential to generate almost 100% spin-polarized current injection into nonmagnetic semiconductors. Optical control of ferromagnetism and spin splitting in the base can lead to either long-lived or ultrafast switching behavior. Fringe field control of the base magnetization could be used for information transfer between metallic magnetoelectronics and conventional semiconducting electronics.
ACCESSION #
10106487

 

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