Theory of semiconductor magnetic bipolar transistors

Flatté, M. E.; Yu, Z. G.; Johnston-Halperin, E.; Awschalom, D. D.
June 2003
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4740
Academic Journal
Bipolar transistors with a ferromagnetic base are shown theoretically to have the potential to generate almost 100% spin-polarized current injection into nonmagnetic semiconductors. Optical control of ferromagnetism and spin splitting in the base can lead to either long-lived or ultrafast switching behavior. Fringe field control of the base magnetization could be used for information transfer between metallic magnetoelectronics and conventional semiconducting electronics.


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