Large remanent polarization of 100% polar-axis-oriented epitaxial tetragonal Pb(Zr[sub 0.35]Ti[sub 0.65])O[sub 3] thin films

Morioka, Hitoshi; Asano, Gouji; Oikawa, Takahiro; Funakubo, Hiroshi; Saito, Keisuke
June 2003
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4761
Academic Journal
100% polar-axis (c-axis)-oriented epitaxial Pb(Zr[SUB0.35]Ti[SUB0.65])O[SUB3] (PZT) thin films were grown and their large remanent polarization (P[SUBr]) was directly measured. Perfectly c-axis-oriented epitaxial PZT thin)films were obtained on (100)[SUBc]SrRuO[SUB3]//(100)SrTiO[SUB3] substrates when the deposition temperature increased to 540 °C together with a decrease in the film thickness down to 50 nm. Polarization-electric-field hysteresis loops were well saturated and had a square shape. The P[SUBr] of a 50 nm thick film saturated at 0.9 V, and its value was over 90 mC/cm[SUP2]; almost independent of the measurement frequency within the range from 20 Hz to 1 kHz. This value was in good agreement with the estimated one from the a- and c-axes mixture-oriented epitaxial PZT film having the same composition taking into account the fact that only the c-axis-oriented domain contributed to the polarization. On the other hand, the coercive field value of a perfectly c-axis-oriented film was 140 kV/cm and almost the same as that of the mixture-oriented one having the same film thickness. These results show that PZT has a large P[SUBr] applicable for high-density ferroelectric random access memory.


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