Dielectric and transverse piezoelectric properties of sol-gel-derived (001) Pb[Yb[sub 1/2]Nb[sub 1/2]]O[sub 3]–PbTiO[sub 3] epitaxial thin films

Zhou, Q. F.; Zhang, Q. Q.; Yoshimura, T.; Trolier-McKinstry, S.
June 2003
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4767
Academic Journal
(1-x)Pb[Yb[SUB1/2]Nb[SUB1/2]O[SUB3]-xPbTiO[SUB3] (PYbN-PT, x50.5) epitaxial thin films were deposited on (001) SrRuO[SUB3]/(001) MgO substrates by sol-gel processing. X-ray diffraction analysis revealed that the films were pyrochlore-free (001) epitaxial films when crystallized at 750 °C for 1 min. The dielectric permittivity and loss factor varied only slightly with frequency in the range of 100 to 10 000 Hz. At 1 kHz, the dielectric permittivity was 870 and the dielectric loss was 0.03 at room temperature. Compared with (111) PYbN-PT films, (001) PYbN-PT films exhibited better ferroelectric and piezoelectric properties. The remanent polarization (P[SUBr]) was 37 μC/cm[SUP2]. The effective transverse piezoelectric e[SUB31,f] coefficient of the films were -10.2 C/m[SUP2] when films were poled at room temperature. Enhanced piezoelectric properties were obtained using unique two-step method poling the PYbN-PT films at higher temperatures.


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