TITLE

Ferroelectric field-effect transistor with a SrRu[sub x]Ti[sub 1-x]O[sub 3] channel

AUTHOR(S)
Schrott, A. G.; Misewich, J. A.; Nagarajan, V.; Ramesh, R.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4770
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A ferroelectric field-effect transistor with a SrRu[SUBx]Ti[SUB1-x]O[SUB3] solid-solution channel layer and a lead zirconate titanate gate oxide has been fabricated. The remnant polarization of the ferroelectric yields two states at 0 V, which produce a relative change in channel resistance (ΔR/R) of 75% and a coercivity of 3 V. The channel has sufficient off-state free carrier concentration to provide sufficient balancing charge for ferroelectric stability. The device was subjected to more than 1010 read-write cycles with no degradation. This nonvolatile device offers the possibility of a nondestructive, current sense memory cell with good retention properties.
ACCESSION #
10106477

 

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