Ferroelectric field-effect transistor with a SrRu[sub x]Ti[sub 1-x]O[sub 3] channel

Schrott, A. G.; Misewich, J. A.; Nagarajan, V.; Ramesh, R.
June 2003
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4770
Academic Journal
A ferroelectric field-effect transistor with a SrRu[SUBx]Ti[SUB1-x]O[SUB3] solid-solution channel layer and a lead zirconate titanate gate oxide has been fabricated. The remnant polarization of the ferroelectric yields two states at 0 V, which produce a relative change in channel resistance (ΔR/R) of 75% and a coercivity of 3 V. The channel has sufficient off-state free carrier concentration to provide sufficient balancing charge for ferroelectric stability. The device was subjected to more than 1010 read-write cycles with no degradation. This nonvolatile device offers the possibility of a nondestructive, current sense memory cell with good retention properties.


Related Articles

  • Evidence for ferroelectric border traps near the SrBi[sub 2]Ta[sub 2]O[sub 9]/Si interface through capacitance-voltage measurement. Li, W. P.; Li, W.P.; Zhang, R.; Shen, J.; Liu, Y. M.; Liu, Y.M.; Shen, B.; Chen, P.; Zhou, Y. G.; Zhou, Y.G.; Li, J.; Yuan, X. L.; Yuan, X.L.; Chen, Z. Z.; Chen, Z.Z.; Shi, Y.; Liu, Z. G.; Liu, Z.G.; Zheng, Y. D.; Zheng, Y.D. // Applied Physics Letters;7/24/2000, Vol. 77 Issue 4 

    A metal-ferroelectric-semiconductor (MFS) structure has been developed by depositing SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT) films directly on n-type (100) Si by pulsed laser deposition. In the MFS structure, evidence for ferroelectric border traps in the SBT film has been obtained by high-frequency...

  • Ferroelectric switching of a field-effect transistor with a lithium niobate gate insulator. Rost, Timothy A.; He Lin; Rabson, Thomas A. // Applied Physics Letters;12/30/1991, Vol. 59 Issue 27, p3654 

    Examines the ferroelectric switching of a field-effect transistor with a lithium niobate gate insulator. Effects of voltage pulses application on field-effect transistor channel conductance; Influence of LiNbO[sub 3] layer polarization charge on the channel carriers; Use of diffractometry in...

  • Basic characteristics of metal-ferroelectric-insulator-semiconductor structure using a high-k PrO[sub x] insulator layer. Noda, Minoru; Kodama, Kazushi; Kitai, Satoshi; Takahashi, Mitsue; Kanashima, Takeshi; Okuyama, Masanori // Journal of Applied Physics;4/1/2003, Vol. 93 Issue 7, p4137 

    A metal-ferroelectric [SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT)]-high-k-insulator(PrO[sub x])-semiconductor(Si) structure has been fabricated and evaluated as a key part of metal-ferroelectric-insulatorsemiconductor-field-effect-transistor MFIS-FET memory, aiming to improve the memory retention...

  • Ferroelectric Pb(Zr[sub 0.52]Ti[sub 0.48])/SiC field-effect transistor. Sang-Mo Koo; Khartsev, Sergey; Zetterling, Carl-Mikael; Grishin, Alex; Ostling, Mikael // Applied Physics Letters;11/10/2003, Vol. 83 Issue 19, p3975 

    Nonvolatile operation of ferroelectric gate field-effect transistors in silicon carbide (SiC) is demonstrated. Depletion mode transistors have been realized by forming a Pb(Zr[sub 0.52]Ti[sub 0.48])O[sub 3]/Al[sub 2]O[sub 3] gate stack on n-type epitaxial channel layer and p-type substrate of...

  • Memory properties of a ferroelectric gate field-effect transistor with an adjoining metal–ferroelectric–metal assistance cell. Xiong, Sibei; Sakai, Shigeki; Ishii, Kenichi; Migita, Shinji; Sakamaki, Kazuo; Ota, Hiroyuki; Suzuki, Eiichi // Journal of Applied Physics;8/15/2003, Vol. 94 Issue 4, p2559 

    We prepared a ferroelectric gate field-effect transistor (FET) memory that consists of a normal metal-ferroelectric-metal-insulator-Si FET and an adjoining metal-ferroelectric-metal auxiliary cell. Due to this cell, the FET exhibited excellent nonvolatile memory properties of low-voltage...

  • Electric-field dependence of mobile proton-induced switching in protonated gate oxide field-effect transistors. Devine, R. A. B.; Devine, R.A.B.; Huiberts, J.N. // Applied Physics Letters;9/18/2000, Vol. 77 Issue 12 

    The switching characteristics of protonated gate oxide field-effect transistors for use as integrated memory element devices have been studied. The rate of switching of the source drain current in devices having 20 and 40 nm gate oxide thicknesses which contain mobile protons is found to vary...

  • Four-mask-step power-MOSFET process boosts throughput by 30%... Goodenough, Frank // Electronic Design;12/4/95, Vol. 43 Issue 25, p42 

    Discusses power MOSFET designers. Technical information.

  • MOSFET gate-drve generator. Lakshminarayanan, V. // Electronic Design;12/4/95, Vol. 43 Issue 25, p109 

    Reports information pertaining to modern technology. MOSFETs discussed.

  • Voltage regulators offer low dropout.  // Electronic Design;12/4/95, Vol. 43 Issue 25, p140 

    Reports that with n-channel MOSFETs on the output as linear pass elements, the MSK 5020 voltage regulator achieves extremely low dropout-voltage specifications under high current conditions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics