Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates

Zhong, Zhenyang; Halilovic, A.; Fromherz, T.; Schäffler, F.; Bauer, G.
June 2003
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4779
Academic Journal
Two-dimensional (2D) periodic arrays of Ge islands were realized on prepatterned Si (001) substrates by solid-source molecular-beam epitaxy. Atomic-force microscopy images demonstrate that the Ge islands are formed in the 2D laterally ordered pits of patterned substrates. The 2D periodicity of the substrate pattern is replicated throughout a stack of Ge island layers by strain-driven vertical ordering. Photoluminescence spectra of the ordered Ge islands show well-resolved peaks of the no-phonon signal and the transverse-optical phonon replica. These peaks are observed at nearly the same energy as those of random Ge islands deposited under the same conditions on unpatterned Si substrates.


Related Articles

  • Exciton luminescence in Si1-xGex/Si heterostructures grown by molecular beam epitaxy. Rowell, N. L.; Noël, J.-P.; Houghton, D. C.; Wang, A.; Lenchyshyn, L. C.; Thewalt, M. L. W.; Perovic, D. D. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2790 

    Reports on the characterization of coherent Si[sub1-x]Ge[subx] alloys and multilayers synthesized by molecular beam epitaxy on silicon(100) substrates by low-temperature photoluminescence spectroscopy and transmission electron microscopy. Experiment; Results; Discussion.

  • Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density. Takanori Tanaka; Naoyuki Kawabata; Yoichiro Mitani; Nobuyuki Tomita; Masayoshi Tarutani; Takeharu Kuroiwa; Yoshihiko Toyoda; Masayuki Imaizumi; Hiroaki Sumitani; Satoshi Yamakawa // Materials Science Forum;2014, Vol. 778-780, p91 

    SiC epitaxial layer with low basal plane dislocation (BPD) density of 0.2/cm² was successfully grown under higher C/Si ratio, which is found on the investigation about growth conditions. In order to study conversion mechanism of BPDs to threading edge dislocations (TEDs), angles between...

  • Atomic Layer Epitaxial Growth of Gaas on Porous Silicon Substrate. Lajnef, Mohamed; Bardaoui, Afrah; Sagne, Isabelle; Chtouroua, Radwan; Ezzaouia, Hatem // American Journal of Applied Sciences;2008, Vol. 5 Issue 5, p605 

    GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is...

  • Properties of deep photoluminescence bands in SiGe/Si quantum structures grown by molecular beam.... Buyanova, I.A.; Chen, W.M. // Applied Physics Letters;9/18/1995, Vol. 67 Issue 12, p1642 

    Investigates the properties of deep photoluminescence (PL) bands in silicon compounds quantum structures grown by molecular beam epitaxy. Effects of ion bombardment on the broad band structures of the compounds; Components of photoluminescence bands; Inquiry on the origin of photoluminescence...

  • Photoluminescence studies of ultrahigh-purity epitaxial silicon. Thewalt, M. L. W.; Steele, A. G.; Huffman, J. E. // Applied Physics Letters;11/24/1986, Vol. 49 Issue 21, p1444 

    Photoluminescence has been used to identify bulk and interfacial contaminants in ultrahigh-purity epitaxially grown silicon. When combined with depth profiling using spreading resistance analysis, it provides a powerful characterization technique which may be used for determining optimal layer...

  • Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100). Wang, W. I. // Applied Physics Letters;1984, Vol. 44 Issue 12, p1149 

    We have grown GaAs and AlGaAs on (100) oriented Si substrates by molecular beam epitaxy. The epitaxial growth was studied in situ by reflection high-energy electron diffraction. Low-temperature photoluminescence, Raman scattering, and scanning electron microscopy were used to characterize the...

  • Structural and optical properties of porous silicon prepared from a p-epitaxial layer on n-Si(111). Len'shin, A.; Kashkarov, V.; Minakov, D.; Agapov, B.; Domashevskaya, E.; Ratnikov, V.; Sorokin, L. // Technical Physics;Mar2013, Vol. 58 Issue 3, p404 

    The structural and optical properties of porous silicon prepared by anodic etching of an n-Si(111) wafer with a p-homoepitaxial layer on one side are studied by scanning electron microscopy and multiple-crystal X-ray diffraction. A considerable difference between the microstructures on the sides...

  • Epitaxy-substrate discrimination in the photoluminescence characterization of epitaxial Si. Steele, A. G.; Thewalt, M. L. W.; Huffman, J. E. // Applied Physics Letters;8/22/1988, Vol. 53 Issue 8, p666 

    We show that the difficulty in separating the epilayer and substrate contributions to the photoluminescence of epitaxial Si samples can be solved simply by growing test samples on a substrate which has no photoluminescence in the region of interest for impurity characterization. Lightly In-doped...

  • Molecular beam epitaxial growth of CdTe on 5-in.-diam Si (100). Sporken, R.; Lange, M. D.; Masset, C.; Faurie, J. P. // Applied Physics Letters;10/1/1990, Vol. 57 Issue 14, p1449 

    CdTe (111)B films with a 5 in. diameter have been grown on Si (100) substrates. They were characterized by in situ electron diffraction, x-ray diffraction, and low-temperature photoluminescence. The layer thickness was measured across two diameters with infrared transmission, and a standard...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics