Local synthesis of silicon nanowires and carbon nanotubes on microbridges

Englander, Ongi; Christensen, Dane; Lin, Liwei
June 2003
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4797
Academic Journal
Resistive heating of microline resistors was used to activate vapor-deposition synthesis of silicon nanowires and carbon nanotubes in a room-temperature chamber. The process is compatible with on-chip microelectronics and eliminates the necessity of postsynthesis assembly of nanostructures to form more complicated devices. The process is localized, selective, and scalable. The synthesized nanowire dimensions are 30-80 nm in diameter and up to 10 μm in length, while nanotubes 10-50 nm in diameter and up to 5 μm in length have been demonstrated. Growth rates of up to 1 μm/min for silicon nanowires and up to 0.25 μm/min for carbon nanotubes were observed. This method facilitates the integration of nanotechnology with larger-scale systems.


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